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Link to original content: https://web.archive.org/web/20190705150420/https://patents.google.com/patent/WO2002038841A3
WO2002038841A3 - Atomic layer doping apparatus and method - Google Patents
The Wayback Machine - https://web.archive.org/web/20190705150420/https://patents.google.com/patent/WO2002038841A3

WO2002038841A3 - Atomic layer doping apparatus and method - Google Patents

Atomic layer doping apparatus and method Download PDF

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Publication number
WO2002038841A3
WO2002038841A3 PCT/US2001/026079 US0126079W WO0238841A3 WO 2002038841 A3 WO2002038841 A3 WO 2002038841A3 US 0126079 W US0126079 W US 0126079W WO 0238841 A3 WO0238841 A3 WO 0238841A3
Authority
WO
WIPO (PCT)
Prior art keywords
doping
doping regions
atomic layer
method
regions
Prior art date
Application number
PCT/US2001/026079
Other languages
French (fr)
Other versions
WO2002038841A2 (en
Inventor
Gurtej Sandhu
Trung T Doan
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US09/653,553 priority Critical
Priority to US09/653,553 priority patent/US6541353B1/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of WO2002038841A2 publication Critical patent/WO2002038841A2/en
Publication of WO2002038841A3 publication Critical patent/WO2002038841A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices

Abstract

An improved atomic layer doping apparatus is disclosed as having multiple doping regions in which individual monolayer species are first deposited and then dopant atoms contained therein are diffused into the substrate. Each doping region is chemically separated from adjacent doping regions. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent doping regions. According to the number of doping regions provided, a plurality of substrates could be simultaneously processed and run through the cycle of doping regions until a desired doping profile is obtained.
PCT/US2001/026079 2000-08-31 2001-08-22 Atomic layer doping apparatus and method WO2002038841A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US09/653,553 2000-08-31
US09/653,553 US6541353B1 (en) 2000-08-31 2000-08-31 Atomic layer doping apparatus and method

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20037003141A KR100564977B1 (en) 2000-08-31 2001-08-22 Atomic layer doping apparatus and method
AT01985952T AT282101T (en) 2000-08-31 2001-08-22 Apparatus and method for atomic layer doping
DE2001607111 DE60107111T2 (en) 2000-08-31 2001-08-22 Apparatus and method for atomic layer doping
JP2002541151A JP2004513525A (en) 2000-08-31 2001-08-22 Atomic layer doping apparatus and method
EP20010985952 EP1335998B1 (en) 2000-08-31 2001-08-22 Atomic layer doping apparatus and method
AU3643002A AU3643002A (en) 2000-08-31 2001-08-22 Atomic layer doping apparatus and method

Publications (2)

Publication Number Publication Date
WO2002038841A2 WO2002038841A2 (en) 2002-05-16
WO2002038841A3 true WO2002038841A3 (en) 2003-05-01

Family

ID=24621343

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/026079 WO2002038841A2 (en) 2000-08-31 2001-08-22 Atomic layer doping apparatus and method

Country Status (9)

Country Link
US (3) US6541353B1 (en)
EP (1) EP1335998B1 (en)
JP (1) JP2004513525A (en)
KR (1) KR100564977B1 (en)
CN (1) CN1267589C (en)
AT (1) AT282101T (en)
AU (1) AU3643002A (en)
DE (1) DE60107111T2 (en)
WO (1) WO2002038841A2 (en)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554829B2 (en) * 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
US20020195056A1 (en) * 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
DE10101014A1 (en) * 2001-01-05 2002-07-11 Zeiss Carl Coating of optical elements, in particular for use with ultraviolet light
EP1368415A1 (en) * 2001-02-23 2003-12-10 The Gates Corporation Process for directly bonding rubber to at least a second substrate, and the resulting article
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6893984B2 (en) * 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US6800172B2 (en) * 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
DE10208450B4 (en) * 2002-02-27 2004-09-16 Infineon Technologies Ag A method for depositing thin films using ALD / CVD processes in connection with rapid thermal processes
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US6932871B2 (en) * 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US6858264B2 (en) * 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6814813B2 (en) * 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6896730B2 (en) * 2002-06-05 2005-05-24 Micron Technology, Inc. Atomic layer deposition apparatus and methods
US7887711B2 (en) * 2002-06-13 2011-02-15 International Business Machines Corporation Method for etching chemically inert metal oxides
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7153542B2 (en) * 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
US20040058293A1 (en) * 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
US6790791B2 (en) * 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US6884739B2 (en) * 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
US6916374B2 (en) * 2002-10-08 2005-07-12 Micron Technology, Inc. Atomic layer deposition methods and atomic layer deposition tools
US6958302B2 (en) 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US6972055B2 (en) * 2003-03-28 2005-12-06 Finens Corporation Continuous flow deposition system
US7135369B2 (en) * 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US6970053B2 (en) * 2003-05-22 2005-11-29 Micron Technology, Inc. Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
DE10339991A1 (en) * 2003-08-29 2005-03-31 Advanced Micro Devices, Inc., Sunnyvale Improved technique for adjusting a penetration depth during the implantation of ions into a semiconductor region
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
KR20070032957A (en) * 2004-06-24 2007-03-23 베네끄 오이 Material doping method and doped materials
US7601649B2 (en) 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
US7081421B2 (en) * 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US20060137609A1 (en) * 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
US20060125030A1 (en) * 2004-12-13 2006-06-15 Micron Technology, Inc. Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics
KR100579860B1 (en) * 2004-12-23 2006-05-08 동부일렉트로닉스 주식회사 Method for forming p type polysilicon using ald and iii group heavy metal
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7508648B2 (en) 2005-02-08 2009-03-24 Micron Technology, Inc. Atomic layer deposition of Dy doped HfO2 films as gate dielectrics
US7374964B2 (en) 2005-02-10 2008-05-20 Micron Technology, Inc. Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
US7399666B2 (en) * 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
SG163544A1 (en) * 2005-03-30 2010-08-30 Panasonic Corp Impurity introducing apparatus and impurity introducing method
US20060237138A1 (en) * 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US7544398B1 (en) * 2005-04-26 2009-06-09 The Regents Of The Univesity Of California Controlled nano-doping of ultra thin films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
KR100760428B1 (en) * 2005-05-13 2007-09-20 오재응 Vapor Deposition Reactor
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7393736B2 (en) * 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
US20070065576A1 (en) * 2005-09-09 2007-03-22 Vikram Singh Technique for atomic layer deposition
US20070087581A1 (en) * 2005-09-09 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Technique for atomic layer deposition
CN1937175B (en) * 2005-09-20 2012-10-03 中芯国际集成电路制造(上海)有限公司 Method for depositing material atomic layer for semiconductor device by using atmosphere
US20070151842A1 (en) * 2005-12-15 2007-07-05 Fluens Corporation Apparatus for reactive sputtering
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20070221640A1 (en) * 2006-03-08 2007-09-27 Dean Jennings Apparatus for thermal processing structures formed on a substrate
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
KR101447184B1 (en) * 2006-11-10 2014-10-08 엘아이지에이디피 주식회사 Process chamber having apparatus for opening and closing gate slit
US7892909B2 (en) * 2007-02-12 2011-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Polysilicon gate formation by in-situ doping
US20080194072A1 (en) * 2007-02-12 2008-08-14 Chen-Hua Yu Polysilicon gate formation by in-situ doping
US7759237B2 (en) * 2007-06-28 2010-07-20 Micron Technology, Inc. Method of forming lutetium and lanthanum dielectric structures
US20090081356A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Process for forming thin film encapsulation layers
WO2009054696A1 (en) * 2007-10-26 2009-04-30 Sosul Co., Ltd. Baffle, substrate supporting apparatus and plasma processing apparatus and plasma processing method
US7790535B2 (en) * 2008-09-16 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Depletion-free MOS using atomic-layer doping
US8361895B2 (en) * 2008-09-16 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-shallow junctions using atomic-layer doping
JP2010153278A (en) * 2008-12-26 2010-07-08 Hitachi High-Technologies Corp Charged particle beam processing device
TWI465599B (en) * 2008-12-29 2014-12-21 K C Tech Co Ltd Atomic layer deposition apparatus
FI122940B (en) * 2009-02-09 2012-09-14 Beneq Oy The reactor chamber
US20100221426A1 (en) * 2009-03-02 2010-09-02 Fluens Corporation Web Substrate Deposition System
US8828835B2 (en) * 2009-03-06 2014-09-09 Texas Instruments Incorporated Ultrashallow emitter formation using ALD and high temperature short time annealing
US8828138B2 (en) 2010-05-17 2014-09-09 International Business Machines Corporation FET nanopore sensor
US8518829B2 (en) 2011-04-22 2013-08-27 International Business Machines Corporation Self-sealed fluidic channels for nanopore array
US20140065799A1 (en) * 2012-09-03 2014-03-06 Intermolecular, Inc. Methods and Systems for Low Resistance Contact Formation
US20140199854A1 (en) * 2013-01-16 2014-07-17 United Microelectronics Corp. Method of forming film on different surfaces
US20160002784A1 (en) * 2014-07-07 2016-01-07 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for depositing a monolayer on a three dimensional structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1758751A1 (en) * 1968-08-01 1971-02-25 Telefunken Patent Furnace for impurity diffusion in Halbleiterkoerpern
US3811826A (en) * 1972-11-03 1974-05-21 Sowell J Diffusion furnace process tube
US4786616A (en) * 1987-06-12 1988-11-22 American Telephone And Telegraph Company Method for heteroepitaxial growth using multiple MBE chambers
JPH01278714A (en) * 1988-04-30 1989-11-09 Sharp Corp Atomic layer planar doping method
EP0840355A1 (en) * 1996-10-29 1998-05-06 Nissin Electric Co., Ltd. Apparatus and method for processing substrate

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089735A (en) * 1968-06-05 1978-05-16 Siemens Aktiengesellschaft Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors
US3602192A (en) * 1969-05-19 1971-08-31 Ibm Semiconductor wafer processing
US3618919A (en) * 1969-11-03 1971-11-09 Btu Eng Corp Adjustable heat and gas barrier
JPS6055478B2 (en) 1982-10-19 1985-12-05 Matsushita Electric Ind Co Ltd
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
US4576830A (en) * 1984-11-05 1986-03-18 Chronar Corp. Deposition of materials
US5298452A (en) * 1986-09-12 1994-03-29 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5013683A (en) * 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH0824191B2 (en) * 1989-03-17 1996-03-06 富士通株式会社 Thin film transistor
AU5977190A (en) 1989-07-27 1991-01-31 Nishizawa, Junichi Impurity doping method with adsorbed diffusion source
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
DE59010916D1 (en) 1990-12-21 2000-11-30 Siemens Ag A process for producing a doped with arsenic smooth polycrystalline silicon layer for very large scale integrated circuits
JPH0812847B2 (en) * 1991-04-22 1996-02-07 アルキヤンテック株式会社 The method of manufacturing a semiconductor manufacturing apparatus and a semiconductor device
JP3049894B2 (en) * 1991-11-27 2000-06-05 日本ゼオン株式会社 Acrylic ester copolymer plastisol composition
JPH0964336A (en) 1995-08-25 1997-03-07 Advantest Corp Ohmic electrode structure of semiconductor and its forming method by atomic layer doping
US5667592A (en) * 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US5792700A (en) * 1996-05-31 1998-08-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US5747113A (en) * 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
ES2159084T3 (en) * 1997-01-07 2001-09-16 Siegfried Dr Stramke Device for surface treatment plasma workpieces.
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
AU8675798A (en) * 1997-07-29 1999-02-22 Silicon Genesis Corporation Cluster tool method and apparatus using plasma immersion ion implantation
US6143082A (en) * 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US20030054133A1 (en) * 2000-08-07 2003-03-20 Wadley Hadyn N.G. Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6576062B2 (en) * 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US6527866B1 (en) * 2000-02-09 2003-03-04 Conductus, Inc. Apparatus and method for deposition of thin films
US20020195056A1 (en) * 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1758751A1 (en) * 1968-08-01 1971-02-25 Telefunken Patent Furnace for impurity diffusion in Halbleiterkoerpern
US3811826A (en) * 1972-11-03 1974-05-21 Sowell J Diffusion furnace process tube
US4786616A (en) * 1987-06-12 1988-11-22 American Telephone And Telegraph Company Method for heteroepitaxial growth using multiple MBE chambers
JPH01278714A (en) * 1988-04-30 1989-11-09 Sharp Corp Atomic layer planar doping method
EP0840355A1 (en) * 1996-10-29 1998-05-06 Nissin Electric Co., Ltd. Apparatus and method for processing substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GRUETZMACHER D A ET AL: "ATOMIC LAYER DOPING FOR SI", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 225, no. 1 / 2, 25 March 1993 (1993-03-25), pages 163 - 167, XP000358305, ISSN: 0040-6090 *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 055 (E - 0882) 31 January 1990 (1990-01-31) *

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