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Link to original content: https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs | IEEE Conference Publication | IEEE Xplore