An all switched-capacitor structure realized piezoresistive pressure sensor interface chip for automotive tire pressure monitoring system is presented. The propose integrated circuit consists of high resolution incremental ADC, low noise switched-capacitor amplifier, high accuracy bangdap reference and low-power relaxation oscillator and other related blocks. Proposed structure was implemented in standard 0.35µm CMOS process with an area of 6.1mm². The experimental results show that the signal conditioning method provides high accuracy of 1% of the full scale output with a battery voltage from 3.6V to 2.1V over the full military temperature range. The charge consumption results into 25mAh in 10 years, including sleep mode and junction leakage current.