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Link to original content: https://doi.org/10.1145/309847.309976
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Leakage control with efficient use of transistor stacks in single threshold CMOS

Published: 01 June 1999 Publication History
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References

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Chen, Z., Johnson, M., Wei, L., and Roy, K. Estimation of standby leakage power in CMOS circuits considering accurate modeling of transistor stacks. Proceedings of the Symposium on Low Power Design and Electronics (1998), 239-244.
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Halter, J.P., and Najm, F. A gate-level leakage power reduction method for ultra-low-power CMOS circuits. Proceedings of the IEEE Custom Integrated Circuits Conference (1997), 475-478.
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Johnson, M.C., Somasekhar, D., and Roy, K. A model for leakage control by MOS transistor stacking. Tech. Rep. TR- ECE 97-12, Purdue University, School of Electrical and Computer Engineering, 1997.
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Maxwell, P.C., and Rearick, J.R. A simulation-based method for estimating defect-free IDDQ. Digest of Papers, IEEE International Workshop on IDDQ Testing (1997), 80- 84.
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Shigematsu, S., et. al. A 1-V high-speed MTCMOS circuit scheme for power-down applications. IEEE Symposium on VLSI Circuits Digest of Technical Papers (1995), 125-126.
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Wei, L., Chen, Z., Roy, K., Johnson, M.C., Ye, Y., and De, V. Design and optimization of dual threshold circuits for low voltage low power applications. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol.7, no.1 (March 1999), 16-24.

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    cover image ACM Conferences
    DAC '99: Proceedings of the 36th annual ACM/IEEE Design Automation Conference
    June 1999
    1000 pages
    ISBN:1581131097
    DOI:10.1145/309847
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    Published: 01 June 1999

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    June 21 - 25, 1999
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    • (2010)DFT and minimum leakage pattern generation for static power reduction during test and burn-inIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2008.201104818:3(392-400)Online publication date: 1-Mar-2010
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