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https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345
Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM | IEEE Conference Publication | IEEE Xplore
