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Link to original content: https://doi.org/10.1007/s11432-021-3267-3
Unidirectional p-GaN gate HEMT with composite source-drain field plates | Science China Information Sciences Skip to main content
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Unidirectional p-GaN gate HEMT with composite source-drain field plates

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References

  1. Chen K J, Haberlen O, Lidow A, et al. GaN-on-Si power technology: devices and applications. IEEE Trans Electron Dev, 2017, 64: 779–795

    Article  Google Scholar 

  2. Zhou C H, Chen W, Piner E L, et al. Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability. IEEE Electron Device Lett, 2010, 31: 668–670

    Article  Google Scholar 

  3. Lei J C, Wei J, Tang G F, et al. Reverse-blocking normally-off GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance. IEEE Electron Dev Lett, 2018, 39: 1003–1006

    Article  Google Scholar 

  4. Uemoto Y, Hikita M, Ueno H, et al. Gate injection transistor (GIT)-a normally-off AlGaN/GaN power transistor using conductivity modulation. IEEE Trans Electron Dev, 2007, 54: 3393–3399

    Article  Google Scholar 

  5. Zhang T, Zhang J C, Zhou H, et al. A>3 kV/2.94 m Ω·cm2 and low leakage current with low turn-on voltage lateral GaN Schottky barrier diode on silicon substrate with anode engineering technique. IEEE Electron Dev Lett, 2019, 40: 1583–1586

    Article  Google Scholar 

  6. Saito W, Nitta T, Kakiuchi Y, et al. Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure. IEEE Trans Electron Dev, 2007, 54: 1825–1830

    Article  Google Scholar 

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Acknowledgements

This work was supported in part by the Key Research and Development Program of Shaanxi (Grant No. 2020ZDLGY03-05), Key-Area Resarch and Development Program of Guangdong Province (Grant No. 2020B010174001), and National Natural Science Foundation of China (Grant Nos. 61574112, 61974115).

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Authors and Affiliations

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang & Yue Hao

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  1. Haiyong Wang
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  2. Wei Mao
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  3. Shenglei Zhao
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  4. Yuanhao He
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  5. Jiabo Chen
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  6. Ming Du
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  7. Xuefeng Zheng
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  8. Chong Wang
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  9. Chunfu Zhang
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  10. Jincheng Zhang
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  11. Yue Hao
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Corresponding authors

Correspondence to Wei Mao or Shenglei Zhao.

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Wang, H., Mao, W., Zhao, S. et al. Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci. China Inf. Sci. 65, 129405 (2022). https://doi.org/10.1007/s11432-021-3267-3

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