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Link to original content: https://doi.org/10.1007/s11432-020-3155-7
A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps | Science China Information Sciences Skip to main content
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A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61734003, 61521001, 61927808, 61851401).

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Author notes

  1. Xu Y F and Li W S have the same contribution to this work.

Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China

    Yifei Xu, Weisheng Li, Dongxu Fan, Yi Shi, Hao Qiu & Xinran Wang

Authors
  1. Yifei Xu
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  2. Weisheng Li
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  3. Dongxu Fan
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  4. Yi Shi
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  5. Hao Qiu
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  6. Xinran Wang
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Corresponding authors

Correspondence to Hao Qiu or Xinran Wang.

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Xu, Y., Li, W., Fan, D. et al. A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps. Sci. China Inf. Sci. 64, 140408 (2021). https://doi.org/10.1007/s11432-020-3155-7

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  • DOI: https://doi.org/10.1007/s11432-020-3155-7

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