Matteo Meneghini Oliver Hilt Clément Fleury Riccardo Silvestri Mattia Capriotti Gottfried Strasser Dionyz Pogany Eldad Bahat-Treidel Frank Brunner A. Knauer Joachim Würfl Isabella Rossetto Enrico Zanoni Gaudenzio Meneghesso Stefano Dalcanale Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. 177-184 2016 58 Microelectron. Reliab. https://doi.org/10.1016/j.microrel.2015.11.026 https://www.wikidata.org/entity/Q62475753 db/journals/mr/mr58.html#MeneghiniHFSCSP16
