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Link to original content: https://dblp.uni-trier.de/rec/conf/irps/MaassRAR20.html?view=bibtex
dblp: BibTeX record conf/irps/MaassRAR20

BibTeX record conf/irps/MaassRAR20

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@inproceedings{DBLP:conf/irps/MaassRAR20,
  author       = {Sebastian Maa{\ss} and
                  Hans Reisinger and
                  Thomas Aichinger and
                  Gerald Rescher},
  title        = {Influence of high-voltage gate-oxide pulses on the {BTI} behavior
                  of SiC MOSFETs},
  booktitle    = {2020 {IEEE} International Reliability Physics Symposium, {IRPS} 2020,
                  Dallas, TX, USA, April 28 - May 30, 2020},
  pages        = {1--6},
  publisher    = {{IEEE}},
  year         = {2020},
  url          = {https://doi.org/10.1109/IRPS45951.2020.9129232},
  doi          = {10.1109/IRPS45951.2020.9129232},
  timestamp    = {Thu, 14 Oct 2021 10:37:08 +0200},
  biburl       = {https://dblp.org/rec/conf/irps/MaassRAR20.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

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