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Link to original content: https://dblp.uni-trier.de/rec/conf/irps/ChenLLCCSTYHCLC20.rdf
Kuan-Ting Chen et al.: Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. (2020) conf/irps/ChenLLCCSTYHCLC20 10.1109/IRPS45951.2020.9129088 Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory. 22 Kuan-Ting Chen 1 C. Lo 2 Y.-Y. Lin 3 C.-Y. Chueh 4 C. Chang 5 G.-Y. Siang 6 Y.-J. Tseng 7 Y.-J. Yang 8 F.-C. Hsieh 9 S.-H. Chang 10 H. Liang 11 S.-H. Chiang 12 J.-H. Liu 13 Y.-D. Lin 14 P.-C. Yeh 15 C.-Y. Wang 16 H.-Y. Yang 17 P.-J. Tzeng 18 M.-H. Liao 19 Shu-Tong Chang 20 Y.-Y. Tseng 21 Min-Hung Lee 22 1-4 IRPS IRPS 2020 2020 provenance information for RDF data of dblp record 'conf/irps/ChenLLCCSTYHCLC20' 2023-09-30T09:49:38+0200