Sachin Yadav et al.: CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. (2021)conf/icicdt/YadavCZVPAKMELR2110.1109/ICICDT51558.2021.9626530CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities.13Sachin Yadav 00011Pieter Cardinael2Ming Zhao3Komal Vondkar4Uthayasankaran Peralagu5AliReza Alian6Ahmad Khaled7Sergej Makovejev8Enrique Ekoga9Dimitri Lederer10Jean-Pierre Raskin11Bertrand Parvais12Nadine Collaert131-4ICICDTICICDT20212021provenance information for RDF data of dblp record 'conf/icicdt/YadavCZVPAKMELR21'2024-12-12T10:53:27+0100