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Link to original content: https://dblp.uni-trier.de/rec/conf/icicdt/YadavCZVPAKMELR21.rdf
Sachin Yadav et al.: CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. (2021) conf/icicdt/YadavCZVPAKMELR21 10.1109/ICICDT51558.2021.9626530 CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. 13 Sachin Yadav 0001 1 Pieter Cardinael 2 Ming Zhao 3 Komal Vondkar 4 Uthayasankaran Peralagu 5 AliReza Alian 6 Ahmad Khaled 7 Sergej Makovejev 8 Enrique Ekoga 9 Dimitri Lederer 10 Jean-Pierre Raskin 11 Bertrand Parvais 12 Nadine Collaert 13 1-4 ICICDT ICICDT 2021 2021 provenance information for RDF data of dblp record 'conf/icicdt/YadavCZVPAKMELR21' 2024-12-12T10:53:27+0100