Hans ReisingerTibor GrasserMaximilian W. FeilKatja WaschneckHans ReisingerJudith BerensDominic WaldhörA. VasilevMichael WaltlThomas AichingerM. BockstedteWolfgang GustinGregor PobegenA Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.32024IRPShttps://doi.org/10.1109/IRPS48228.2024.10529465conf/irps/2024db/conf/irps/irps2024.html#GrasserFWRBWVWABGP24Christian BognerChristian SchlünderMichael WaltlHans ReisingerTibor GrasserModeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability.1-72023IRPShttps://doi.org/10.1109/IRPS48203.2023.10117818conf/irps/2023db/conf/irps/irps2023.html#BognerSWRG23Maximilian W. FeilKatja WaschneckHans ReisingerJudith BerensThomas AichingerPaul SalmenGerald RescherWolfgang GustinTibor GrasserTowards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.1-102023IRPShttps://doi.org/10.1109/IRPS48203.2023.10117740conf/irps/2023db/conf/irps/irps2023.html#FeilWRBASRGG23Christian BognerTibor GrasserMichael WaltlHans ReisingerChristian SchlünderEfficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.1-82022IRPShttps://doi.org/10.1109/IRPS48227.2022.9764496conf/irps/2022db/conf/irps/irps2022.html#BognerGWRS22Maximilian W. FeilHans ReisingerAndré KabakowThomas AichingerWolfgang GustinTibor GrasserOptical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.32022IRPShttps://doi.org/10.1109/IRPS48227.2022.9764584conf/irps/2022db/conf/irps/irps2022.html#FeilRKAGG22Paul SalmenMaximilian W. FeilKatja WaschneckHans ReisingerGerald RescherThomas AichingerA new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.1-72021IRPShttps://doi.org/10.1109/IRPS46558.2021.9405207conf/irps/2021db/conf/irps/irps2021.html#SalmenFWRRA21Sebastian MaaßHans ReisingerThomas AichingerGerald RescherInfluence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.1-62020IRPShttps://doi.org/10.1109/IRPS45951.2020.9129232conf/irps/2020db/conf/irps/irps2020.html#MaassRAR20Christian SchlünderKatja WaschneckPeter RotterSusanne LachenmannHans ReisingerFranz UngarGeorg GeorgakosFrom Device Aging Physics to Automated Circuit Reliability Sign Off.1-122019IRPShttps://doi.org/10.1109/IRPS.2019.8720457conf/irps/2019db/conf/irps/irps2019.html#SchlunderWRLRUG19Christian SchlünderKatja PuschkarskyGunnar Andreas RottWolfgang GustinHans ReisingerNBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.1-10201882Microelectron. Reliab.https://doi.org/10.1016/j.microrel.2017.12.043db/journals/mr/mr82.html#SchlunderPRGR18Katja PuschkarskyHans ReisingerChristian SchlünderWolfgang GustinTibor GrasserFast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.218-2212018ESSDERChttps://doi.org/10.1109/ESSDERC.2018.8486855conf/essderc/2018db/conf/essderc/essderc2018.html#PuschkarskyRSGG18Tibor GrasserBernhard StampferMichael WaltlGerhard RzepaKarl RuppFranz SchanovskyGregor PobegenKatja PuschkarskyHans ReisingerBarry J. O'SullivanBen KaczerCharacterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.22018IRPShttps://doi.org/10.1109/IRPS.2018.8353540conf/irps/2018db/conf/irps/irps2018.html#GrasserSWRRSPPR18Katja PuschkarskyTibor GrasserThomas AichingerWolfgang GustinHans ReisingerUnderstanding and modeling transient threshold voltage instabilities in SiC MOSFETs.32018IRPShttps://doi.org/10.1109/IRPS.2018.8353560conf/irps/2018db/conf/irps/irps2018.html#PuschkarskyGAGR18Christian SchlünderJörg BertholdFabian ProebsterAndreas Martin 0002Wolfgang GustinHans ReisingerDegradation and recovery of variability due to BTI.179-184201664Microelectron. Reliab.https://doi.org/10.1016/j.microrel.2016.07.007db/journals/mr/mr64.html#SchlunderBPMGR16Gunnar Andreas RottKarina RottHans ReisingerWolfgang GustinTibor GrasserMixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.2310-2314201454Microelectron. Reliab.9-10https://doi.org/10.1016/j.microrel.2014.07.040db/journals/mr/mr54.html#RottRRGG14Tibor GrasserGerhard RzepaMichael WaltlWolfgang GoesKarina RottGunnar Andreas RottHans ReisingerJacopo FrancoBen KaczerCharacterization and modeling of charge trapping: From single defects to devices.1-42014ICICDThttps://doi.org/10.1109/ICICDT.2014.6838620conf/icicdt/2014db/conf/icicdt/icicdt2014.html#GrasserRWGRRRFK14Karina RottHans ReisingerStefano AresuChristian SchlünderKlaus KölpinWolfgang GustinTibor GrasserNew insights on the PBTI phenomena in SiON pMOSFETs.1891-1894201252Microelectron. Reliab.9-10https://doi.org/10.1016/j.microrel.2012.06.015db/journals/mr/mr52.html#RottRASKGG12Ph. HehenbergerP.-J. WagnerHans ReisingerTibor GrasserOn the temperature and voltage dependence of short-term negative bias temperature stress.1013-1017200949Microelectron. Reliab.9-11https://doi.org/10.1016/j.microrel.2009.06.040db/journals/mr/mr49.html#HehenbergerWRG09Thomas AichingerStefano AresuJudith BerensJörg BertholdM. BockstedteChristian BognerMaximilian W. FeilJacopo FrancoGeorg GeorgakosWolfgang GösWolfgang GoesTibor GrasserWolfgang GustinPh. HehenbergerAndré KabakowBen KaczerKlaus KölpinSusanne LachenmannSebastian MaaßAndreas Martin 0002Barry J. O'SullivanGregor PobegenFabian ProebsterGerald RescherGunnar Andreas RottKarina RottPeter RotterKarl RuppGerhard RzepaPaul SalmenFranz SchanovskyChristian SchlünderBernhard StampferFranz UngarA. VasilevP.-J. WagnerDominic WaldhörMichael WaltlKatja WaschneckKatja Puschkarsky
