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2020 – today
- 2024
[c23]IkJoon Choi, Seunghwan Hong, Kihyun Kim, Jeongsik Hwang, Seunghan Woo, Young-Sang Kim, Cheongryong Cho, Eun-Young Lee, Hun-Jae Lee, Min-Su Jung, Hee-Yun Jung, Ju-Seong Hwang, Junsub Yoon, Wonmook Lim, Hyeong-Jin Yoo, Won-Ki Lee, Jung-Kyun Oh, Dong-Su Lee, Jong-Eun Lee, Jun-Hyung Kim, Young-Kwan Kim, Su-Jin Park, Byung-Kyu Ho, Byongwook Na, Hye-In Choi, Chung-Ki Lee, Soo-Jung Lee, Hyunsung Shin, Young-Kyu Lee, Jang-Woo Ryu, Sangwoong Shin, Sungchul Park, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, SangJoon Hwang:
13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5th-Generation 10nm DRAM Process. ISSCC 2024: 234-236- 2023
- [c22]Hyun-A. Ahn, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim, Donghun Lee, Young-Gil Go, Jae-Woo Lee, Jae-Woo Jung, Yong-Hyun Kim, Garam Choi, Jun-Seo Park, Bo-Hyeon Lee, Jin-Hyeok Baek, Daesik Moon, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Changsik Yoo, Tae-Young Oh:
A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications. A-SSCC 2023: 1-4 - [c21]Daehyun Kwon, Heon Su Jeong, Jaemin Choi, Wijong Kim, Jae Woong Kim, Junsub Yoon, Jungmin Choi, Sanguk Lee, Hyunsub Norbert Rie, Jin-Il Lee, Jongbum Lee, Taeseong Jang, JunHyung Kim, Sanghee Kang, Jung-Bum Shin, Yanggyoon Loh, Chang-Yong Lee, Junmyung Woo, Hye-Seung Yu, Changhyun Bae, Reum Oh, Young-Soo Sohn, Changsik Yoo, Jooyoung Lee:
A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accurate Duty Corrector and NBTI-Tolerant DLL. ISSCC 2023: 412-413 - 2021
- [c20]Jin Hyun Kim, Shinhaeng Kang, Sukhan Lee, Hyeonsu Kim, Woongjae Song, Yuhwan Ro, Seungwon Lee, David Wang, Hyunsung Shin, BengSeng Phuah, Jihyun Choi, Jinin So, YeonGon Cho, Joon-Ho Song, Jangseok Choi, Jeonghyeon Cho, Kyomin Sohn, Young-Soo Sohn, Kwang-Il Park, Nam Sung Kim:
Aquabolt-XL: Samsung HBM2-PIM with in-memory processing for ML accelerators and beyond. HCS 2021: 1-26 - [c19]Sung Joo Park, Jonghoon J. Kim, Kun Joo, Young-Ho Lee, Kyoungsun Kim, Young-Tae Kim, Woo-Jin Na, IkJoon Choi, Hye-Seung Yu, Wonyoung Kim, Ju-Yeon Jung, Jaejun Lee, Dohyung Kim, Young-Uk Chang, Gong-Heum Han, Hangi-Jung, Sunwon Kang, Jeonghyeon Cho, Hoyoung Song, Tae-Young Oh, Young-Soo Sohn, SangJoon Hwang, Jooyoung Lee:
Industry's First 7.2 Gbps 512GB DDR5 Module. HCS 2021: 1-11 - 2020
- [j15]Kyung-Soo Ha
, Seungseob Lee, Youn-Sik Park, Hyuck-Joon Kwon, Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Hyong-Ryol Hwang, Dukha Park, Young-Hwa Kim, Young Hoon Son, Byongwook Na:
A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM With Various High-Speed and Low-Power Techniques. IEEE J. Solid State Circuits 55(1): 157-166 (2020) - [c18]Hyung-Joon Chi, Chang-Kyo Lee, Junghwan Park, Jin-Seok Heo, Jaehoon Jung, Dongkeon Lee, Dae-Hyun Kim, Dukha Park, Kihan Kim, Sang-Yun Kim, Jinsol Park, Hyunyoon Cho, Sukhyun Lim, YeonKyu Choi, Youngil Lim, Daesik Moon, Geuntae Park, Jin-Hun Jang, Kyungho Lee, Isak Hwang, Cheol Kim, Younghoon Son, Gil-Young Kang, Kiwon Park, Seungjun Lee, Su-Yeon Doo, Chang-Ho Shin, Byongwook Na, Ji-Suk Kwon, Kyung Ryun Kim, Hye-In Choi, Seouk-Kyu Choi, Soobong Chang, Wonil Bae, Hyuck-Joon Kwon, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee:
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process. ISSCC 2020: 382-384
2010 – 2019
- 2019
- [j14]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Min-Su Ahn, Yong-Hun Kim, Yong Jae Lee, Dong-Seok Kang, Sung-Geun Do, Chang-Yong Lee, Gun-hee Cho, Jae-Koo Park, Jae-Sung Kim, Kyung-Bae Park, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Hyun-Soo Park, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Yong-Jun Kim, Young-Hun Seo, Chang-Ho Shin, ChanYong Lee, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byung-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking. IEEE J. Solid State Circuits 54(1): 197-209 (2019) - [c17]Kyung-Soo Ha, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Jin-Hun Jang, Hyong-Ryol Hwang, Hyung-Joon Chi, Junghwan Park, Seungjun Shin, Dukha Park, Sang-Yun Kim, Sukhyun Lim, Kiwon Park, YeonKyu Choi, Young-Hwa Kim, Younghoon Son, Hyunyoon Cho, Byongwook Na, Hyo-Joo Ahn, Seungseob Lee, Seouk-Kyu Choi, Youn-Sik Park, Seok-Hun Hyun, Soobong Chang, Hyuck-Joon Kwon, Jung-Hwan Choi, Tae-Young Oh, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power. ISSCC 2019: 378-380 - [c16]Jin-Seok Heo, Kihan Kim, Dong-Hoon Lee, Chang-Kyo Lee, Daesik Moon, Kiho Kim, Jin-Hyeok Baek, Sung-Woo Yoon, Hui-Kap Yang, Kyungryun Kim, Youngjae Kim, Bokgue Park, Su-Jin Park, Joung-Wook Moon, Jae-Hyung Lee, Yun-Sik Park, Soobong Jang, Seok-Hun Hyun, Hyuck-Joon Kwon, Jung-Hwan Choi, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee:
A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration. VLSI Circuits 2019: 114- - 2018
- [j13]Chang-Kyo Lee, Junha Lee, Kiho Kim, Jin-Seok Heo, Jin-Hyeok Baek, Gil-Hoon Cha, Daesik Moon, Dong-Hun Lee, Jong-Wook Park, Seunseob Lee, Si-Hyeong Cho, Young-Ryeol Choi, Kyung-Soo Ha, Eunsung Seo, Youn-Sik Park, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM. IEEE J. Solid State Circuits 53(10): 2906-2916 (2018) - [c15]Joung-Wook Moon, Hye-Sung Yoo, Hundai Choi, Il-Won Park, Seok-Yong Kang, Jun-Bae Kim, Haeyoung Chung, Kiho Kim, Dong-Hun Lee, Ki-Jae Song, Seok-Hun Hyun, Indal Song, Young-Soo Sohn, Yong-Ho Cho, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM. A-SSCC 2018: 139-142 - [c14]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Yoon-Joo Eom, Young-Sik Kim, Min-Su Ahn, Yong-Hun Kim, Sang-Hoon Jung, Sung-Geun Do, Chang-Yong Lee, Jae-Sung Kim, Dong-Seok Kang, Kyung-Bae Park, Jung-Bum Shin, Jong-Ho Lee, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ji-Suk Kwon, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Min-Woo Won, Gun-hee Cho, Hyun-Soo Park, Hyung-Kyu Kim, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Jae-Koo Park, Yong Jae Lee, Yong-Jun Kim, Young-Hun Seo, Beob-Rae Cho, Chang-Ho Shin, ChanYong Lee, YoungSeok Lee, Yoon-Gue Song, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byeong-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. ISSCC 2018: 204-206 - [c13]Ki Chul Chun, Yonggyu Chu, Jin-Seok Heo, Tae-Sung Kim, Soohwan Kim, Hui-Kap Yang, Mi-Jo Kim, Chang-Kyo Lee, Ju-Hwan Kim, Hyunchul Yoon, Chang-Ho Shin, Sang-uhn Cha, Hyung-Jin Kim, Young-Sik Kim, Kyungryun Kim, Young-Ju Kim, Won-Jun Choi, Daesik Yim, Inkyu Moon, Young-Ju Kim, Junha Lee, Young Choi, Yongmin Kwon, Sung-Won Choi, Jung-Wook Kim, Yoon-Suk Park, Woongdae Kang, Jinil Chung, Seunghyun Kim, Yesin Ryu, Seong-Jin Cho, Hoon Shin, Hangyun Jung, Sanghyuk Kwon, Kyuchang Kang, Jongmyung Lee, Yujung Song, Youngjae Kim, Eun-Ah Kim, Kyung-Soo Ha, Kyoung-Ho Kim, Seok-Hun Hyun, Seung-Bum Ko, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. ISSCC 2018: 206-208 - [c12]Jin-Hyeok Baek, Chang-Kyo Lee, Kiho Kim, Daesik Moon, Gil-Hoon Cha, Jin-Seok Heo, Min-Su Ahn, Dong-Ju Kim, Jae-Joon Song, Seokhong Kwon, Jongmin Kim, Kyung-Soo Kim, Jinoh Ahn, Jeong-Sik Nam, Byung-Cheol Kim, Jeong-Hyeon Cho, Jeonghoon Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Ilgweon Kim, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process. VLSI Circuits 2018: 147-148 - 2017
- [j12]Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Hyunui Lee, Seok-Yong Kang, Young-Soo Sohn, Jung-Hwan Choi, Yong-Cheol Bae, Seong-Jin Jang, Gyo-Young Jin:
A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution. IEEE J. Solid State Circuits 52(1): 250-260 (2017) - [c11]Chang-Kyo Lee, Junha Lee, Kiho Kim, Jin-Seok Heo, Gil-Hoon Cha, Jin-Hyeok Baek, Daesik Moon, Yoon-Joo Eom, Tae-Sung Kim, Hyunyoon Cho, Young Hoon Son, Seonghwan Kim, Jong-Wook Park, Sewon Eom, Si-Hyeong Cho, Young-Ryeol Choi, Seungseob Lee, Kyoung-Soo Ha, Youngseok Kim, Bo-Tak Lim, Dae-Hee Jung, Eungsung Seo, Kyoung-Ho Kim, Yoon-Gyu Song, Youn-Sik Park, Tae-Young Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Joon-Young Park, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM. A-SSCC 2017: 153-156 - 2016
- [j11]Il-Min Yi, Soo-Min Lee, Seung-Jun Bae, Young-Soo Sohn, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
A 40 mV-Differential-Channel-Swing Transceiver Using a RX Current-Integrating TIA and a TX Pre-Emphasis Equalizer With a CML Driver at 9 Gb/s. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(1): 122-133 (2016) - [c10]Hye-Yoon Joo, Seung-Jun Bae, Young-Soo Sohn, Young-Sik Kim, Kyung-Soo Ha, Min-Su Ahn, Young-Ju Kim, Yong-Jun Kim, Ju-Hwan Kim, Won-Jun Choi, Chang-Ho Shin, Soo Hwan Kim, Byeong-Cheol Kim, Seung-Bum Ko, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution. ISSCC 2016: 314-315 - [c9]Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Kyung-Woo Nam, Seouk-Kyu Choi, Jaewook Lee, Uksong Kang, Young-Soo Sohn, Jung-Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Gyo-Young Jin:
18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution. ISSCC 2016: 316-317 - [c8]Il-Min Yi, Seung-Jun Bae, Min-Kyun Chae, Soo-Min Lee, Young Jae Jang, Young-Chul Cho, Young-Soo Sohn, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
A low-EMI four-bit four-wire single-ended DRAM interface by using a three-level balanced coding scheme. VLSI Circuits 2016: 1-2 - 2014
- [j10]Il-Min Yi, Soo-Min Lee, Seung-Jun Bae, Young-Soo Sohn, Jung-Hwan Choi, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
A 40-mV-Swing Single-Ended Transceiver for TSV with a Switched-Diode RX Termination. IEEE Trans. Circuits Syst. II Express Briefs 61-II(12): 987-991 (2014) - 2012
- [c7]Il-Min Yi, Seung-Jun Bae, Young-Soo Sohn, Jae-Yoon Sim, Hong-June Park:
An on-chip TSV emulation using metal bar surrounded by metal ring to develop interface circuits. ISOCC 2012: 192-195 - [c6]Young-Sik Kim, Seon-Kyoo Lee, Seung-Jun Bae, Young-Soo Sohn, Jung-Bae Lee, Joo-Sun Choi, Hong-June Park, Jae-Yoon Sim:
An 8GB/s quad-skew-cancelling parallel transceiver in 90nm CMOS for high-speed DRAM interface. ISSCC 2012: 136-138 - 2011
- [j9]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction. IEEE J. Solid State Circuits 46(1): 107-118 (2011) - [j8]Hyung-Joon Chi, Jae-Seung Lee, Seong-Hwan Jeon, Seung-Jun Bae, Young-Soo Sohn, Jae-Yoon Sim, Hong-June Park:
A Single-Loop SS-LMS Algorithm With Single-Ended Integrating DFE Receiver for Multi-Drop DRAM Interface. IEEE J. Solid State Circuits 46(9): 2053-2063 (2011) - [c5]Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, Yun-Seok Yang, Dae-Hyun Kim, Sang-Hyup Kwak, Ho-Seok Seol, Chang-Ho Shin, Min-Sang Park, Gong-Heom Han, Byeong-Cheol Kim, Yong-Ki Cho, Hye-Ran Kim, Su-Yeon Doo, Young-Sik Kim, Dong-Seok Kang, Young-Ryeol Choi, Sam-Young Bang, Sun-Young Park, Yong-Jae Shin, Gil-Shin Moon, Cheol-Goo Park, Woo-Seop Kim, Hyang-Ja Yang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW. ISSCC 2011: 498-500 - 2010
- [c4]Jun-Hyun Bae, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun, Jae-Yoon Sim, Hong-June Park:
A crosstalk-and-ISI equalizing receiver in 2-drop single-ended SSTL memory channel. CICC 2010: 1-4 - [c3]Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun:
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction. ISSCC 2010: 434-435
2000 – 2009
- 2009
- [j7]Seung-Jun Bae, Hyung-Joon Chi, Young-Soo Sohn, Jae-Seung Lee, Jae-Yoon Sim, Hong-June Park:
A 2-Gb/s CMOS Integrating Two-Tap DFE Receiver for Four-Drop Single-Ended Signaling. IEEE Trans. Circuits Syst. I Regul. Pap. 56-I(8): 1645-1656 (2009) - 2008
- [c2]Seung-Jun Bae, Young-Soo Sohn, Kwang-Il Park, Kyoung-Ho Kim, Dae-Hyun Chung, Jingook Kim, Si-Hong Kim, Min-Sang Park, Jae-Hyung Lee, Sam-Young Bang, Ho-Kyung Lee, In-Soo Park, Jae-Sung Kim, Dae-Hyun Kim, Hye-Ran Kim, Yong-Jae Shin, Cheol-Goo Park, Gil-Shin Moon, Ki-Woong Yeom, Kang-Young Kim, Jae-Young Lee, Hyang-Ja Yang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques. ISSCC 2008: 278-279 - 2007
- [j6]Yong-Soo Cho, Sung-Wook Jang, Young-Soo Sohn, Sie-Young Choi:
Design and fabrication of a vibration sensor using a conductive ball. Microelectron. J. 38(3): 416-421 (2007) - 2006
- [j5]Kyu-Hyoun Kim, Young-Soo Sohn, Chan-Kyoung Kim, Moon-Sook Park, Dong-Jin Lee, Woo-Seop Kim, Changhyun Kim:
A 20-gb/s 256-mb DRAM with an inductorless quadrature PLL and a cascaded pre-emphasis transmitter. IEEE J. Solid State Circuits 41(1): 127-134 (2006) - [j4]Soon-Il Kwon, Sung-Won You, Young-Soo Sohn, Yong-Soo Cho, Byung-Nam Park, Sie-Young Choi:
Field emission characteristics of an oxidized porous polysilicon field emitter using the electrochemical oxidation process. Microelectron. J. 37(9): 993-996 (2006) - 2005
- [j3]Seung-Jun Bae, Hyung-Joon Chi, Young-Soo Sohn, Hong-June Park:
A VCDL-based 60-760-MHz dual-loop DLL with infinite phase-shift capability and adaptive-bandwidth scheme. IEEE J. Solid State Circuits 40(5): 1119-1129 (2005) - 2003
- [c1]Young-Soo Sohn, Seung-Jun Bae, Hong-June Park, Changhyun Kim, Soo-In Cho:
A 2.2 Gbps CMOS look-ahead DFE receiver for multidrop channel with pin-to-pin time skew compensation. CICC 2003: 473-476 - 2002
- [j2]Jae-Yoon Sim, Jang-Jin Nam, Young-Soo Sohn, Hong-June Park, Chang-Hyun Kim, Soo-In Cho:
A CMOS transceiver for DRAM bus system with a demultiplexed equalization scheme. IEEE J. Solid State Circuits 37(2): 245-250 (2002)
1990 – 1999
- 1999
- [j1]Jae-Yoon Sim, Young-Soo Sohn, Seung-Chan Heo, Hong-June Park, Soo-In Cho:
A 1-Gb/s bidirectional I/O buffer using the current-mode scheme. IEEE J. Solid State Circuits 34(4): 529-535 (1999)
Coauthor Index
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