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2020 – today
- 2023
[c36]Javier Martín-Martínez, Javier Diaz-Fortuny
, Pablo Saraza-Canflanca, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Montserrat Nafría:
Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability. IRPS 2023: 1-9- [c35]Francisco V. Fernández, Elisenda Roca, Pablo Saraza-Canflanca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López:
Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices. SMACD 2023: 1-4 - 2022
- [j38]Pablo Saraza-Canflanca, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
On the Impact of the Biasing History on the Characterization of Random Telegraph Noise. IEEE Trans. Instrum. Meas. 71: 1-10 (2022) - [c34]Rosana Rodríguez, Javier Martín-Martínez, Emili Salvador Aguilera, Albert Crespo-Yepes, Enrique Miranda, Montserrat Nafría, Antonio Rubio, Vasileios G. Ntinas, Georgios Ch. Sirakoulis:
Beneficial Role of Noise in Hf-based Memristors. ISCAS 2022: 975-979 - [c33]Pablo Saraza-Canflanca, Javier Martín-Martínez, Elisenda Roca, Rafael Castro-López, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation. SMACD 2022: 1-4 - 2021
- [j37]Ana Ruiz, Carlos Couso, Natalia Seoane, Marc Porti, Antonio J. García-Loureiro, Montserrat Nafría:
Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data. IEEE Access 9: 90568-90576 (2021) - [j36]Vasileios G. Ntinas, Antonio Rubio, Georgios Ch. Sirakoulis, Emili Salvador Aguilera, Marta Pedro, Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría:
Power-Efficient Noise-Induced Reduction of ReRAM Cell's Temporal Variability Effects. IEEE Trans. Circuits Syst. II Express Briefs 68(4): 1378-1382 (2021) - 2020
- [j35]Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level. Integr. 72: 13-20 (2020) - [j34]Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Francisco V. Fernández, Montserrat Nafría:
Flexible Setup for the Measurement of CMOS Time-Dependent Variability With Array-Based Integrated Circuits. IEEE Trans. Instrum. Meas. 69(3): 853-864 (2020) - [c32]Rosana Rodríguez, Albert Crespo-Yepes, Javier Martín-Martínez, Montserrat Nafría, Xavier Aragonès, Diego Mateo, Enrique Barajas:
Experimental Monitoring of Aging in CMOS RF Linear Power Amplifiers: Correlation Between Device and Circuit Degradation. IRPS 2020: 1-7
2010 – 2019
- 2019
- [j33]Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Xavier Aragonès, Enrique Barajas, Diego Mateo, Francisco V. Fernández, Montserrat Nafría:
A Versatile CMOS Transistor Array IC for the Statistical Characterization of Time-Zero Variability, RTN, BTI, and HCI. IEEE J. Solid State Circuits 54(2): 476-488 (2019) - [j32]Marcos Maestro-Izquierdo, Javier Martín-Martínez, Albert Crespo-Yepes, Manel Escudero, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Antonio Rubio:
Experimental Verification of Memristor-Based Material Implication NAND Operation. IEEE Trans. Emerg. Top. Comput. 7(4): 545-552 (2019) - [c31]Antonio Toro-Frías, Pablo Saraza-Canflanca, Fábio Passos, Pablo Martín-Lloret, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
Generation of Lifetime-Aware Pareto-Optimal Fronts Using a Stochastic Reliability Simulator. DATE 2019: 78-83 - [c30]Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca Moreno, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
New method for the automated massive characterization of Bias Temperature Instability in CMOS transistors. DATE 2019: 150-155 - [c29]Vasileios G. Ntinas, Iosif-Angelos Fyrigos, Georgios Ch. Sirakoulis, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría:
Noise-induced Performance Enhancement of Variability-aware Memristor Networks. ICECS 2019: 731-734 - [c28]G. Pedreira, Javier Martín-Martínez, Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Montserrat Nafría:
A New Time Efficient Methodology for the Massive Characterization of RTN in CMOS Devices. IRPS 2019: 1-5 - [c27]Xavier Aragonès, Diego Mateo, Enrique Barajas, Albert Crespo-Yepes, Rosana Rodríguez, Javier Martín-Martínez, Montserrat Nafría:
Aging in CMOS RF Linear Power Amplifiers: Experimental Comparison and Modeling. ISCAS 2019: 1-5 - [c26]Vasileios G. Ntinas, Antonio Rubio, Georgios Ch. Sirakoulis, Rosana Rodríguez, Montserrat Nafría:
Experimental Investigation of Memristance Enhancement. NANOARCH 2019: 1-2 - [c25]Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level. SMACD 2019: 197-200 - [c24]Juan Núñez, Elisenda Roca, Rafael Castro-López, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
Experimental Characterization of Time-Dependent Variability in Ring Oscillators. SMACD 2019: 229-232 - [c23]Pablo Martín-Lloret, Juan Núñez, Elisenda Roca, Rafael Castro-López, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
An IC Array for the Statistical Characterization of Time-Dependent Variability of Basic Circuit Blocks. SMACD 2019: 241-244 - 2018
- [j31]Victor M. van Santen, Javier Martín-Martínez, Hussam Amrouch, Montserrat Nafría, Jörg Henkel:
Reliability in Super- and Near-Threshold Computing: A Unified Model of RTN, BTI, and PV. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(1): 293-306 (2018) - [c22]Marta Pedro, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization. DCIS 2018: 1-4 - [c21]Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández:
CMOS Characterization and Compact Modelling for Circuit Reliability Simulation. IOLTS 2018: 139-142 - [c20]Marta Pedro, Javier Martín-Martínez, E. Miranda, Rosana Rodríguez, Montserrat Nafría, M. B. González, Francesca Campabadal:
Device variability tolerance of a RRAM-based self-organizing neuromorphic system. IRPS 2018: 4-1 - [c19]Victor M. van Santen, Javier Diaz-Fortuny, Hussam Amrouch, Javier Martín-Martínez, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Jörg Henkel, Montserrat Nafría:
Weighted time lag plot defect parameter extraction and GPU-based BTI modeling for BTI variability. IRPS 2018: 6-1 - [c18]Enrique Barajas, Xavier Aragonès, Diego Mateo, Francesc Moll, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Marc Porti, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández:
Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology. PATMOS 2018: 82-87 - [c17]Antonio Toro-Frías, Pablo Martín-Lloret, Javier Martín-Martínez, Rafael Castro-López, Elisenda Roca, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
Lifetime Calculation Using a Stochastic Reliability Simulator for Analog ICs. SMACD 2018: 1-9 - [c16]Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Antonio Toro-Frías, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
Automated Massive RTN Characterization Using a Transistor Array Chip. SMACD 2018: 29-32 - [c15]Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Antonio Toro-Frías, Rafael Castro-López, Javier Martín-Martínez, Elisenda Roca, Rosana Rodríguez, Francisco V. Fernández, Montserrat Nafría:
A Model Parameter Extraction Methodology Including Time-Dependent Variability for Circuit Reliability Simulation. SMACD 2018: 53-56 - [c14]Pablo Saraza-Canflanca, D. Malagon, Fábio Passos, A. Toro, Juan Núñez, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
Design Considerations of an SRAM Array for the Statistical Validation of Time-Dependent Variability Models. SMACD 2018: 73-76 - 2017
- [j30]Tobias Berthold, Guenther Benstetter, Werner Frammelsberger, Manuel Bogner, Rosana Rodríguez, Montserrat Nafría:
Protective nanometer films for reliable Cu-Cu connections. Microelectron. Reliab. 76-77: 383-389 (2017) - [c13]Pablo Martín-Lloret, Antonio Toro-Frías, Javier Martín-Martínez, Rafael Castro-López, Elisenda Roca, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
A size-adaptive time-step algorithm for accurate simulation of aging in analog ICs. ISCAS 2017: 1-4 - [c12]Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández:
TARS: A toolbox for statistical reliability modeling of CMOS devices. SMACD 2017: 1-4 - [c11]Javier Diaz-Fortuny, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Enrique Barajas, Xavier Aragonès, Diego Mateo:
A transistor array chip for the statistical characterization of process variability, RTN and BTI/CHC aging. SMACD 2017: 1-4 - [c10]Pablo Martín-Lloret, Antonio Toro-Frías, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría:
CASE: A reliability simulation tool for analog ICs. SMACD 2017: 1-4 - [c9]Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Gabriel Torrens, Sebastià A. Bota, Jaume Segura, Francesc Moll, Antonio Rubio:
Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells. SMACD 2017: 1-4 - [c8]Antonio Toro-Frías, Pablo Martín-Lloret, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría:
Including a stochastic model of aging in a reliability simulation flow. SMACD 2017: 1-4 - 2016
- [j29]Antonio Toro-Frías, Pablo Martín-Lloret, Javier Martín-Martínez, Rafael Castro-López, Elisenda Roca, Rosana Rodríguez, Montserrat Nafría, Francisco V. Fernández:
Reliability simulation for analog ICs: Goals, solutions, and challenges. Integr. 55: 341-348 (2016) - [c7]Victor M. van Santen, Hussam Amrouch, Javier Martín-Martínez, Montserrat Nafría, Jörg Henkel:
Designing guardbands for instantaneous aging effects. DAC 2016: 69:1-69:6 - 2015
- [c6]V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz:
Threshold voltage and on-current Variability related to interface traps spatial distribution. ESSDERC 2015: 230-233 - [c5]Hussam Amrouch, Javier Martín-Martínez, Victor M. van Santen, Miquel Moras, Rosana Rodríguez, Montserrat Nafría, Jörg Henkel:
Connecting the physical and application level towards grasping aging effects. IRPS 2015: 3 - [c4]Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes:
Threading dislocations in III-V semiconductors: Analysis of electrical conduction. IRPS 2015: 4 - 2014
- [j28]Javier Martín-Martínez, Carmen G. Almudéver, Albert Crespo-Yepes, Rosana Rodríguez, Montserrat Nafría, Antonio Rubio:
A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture. Microelectron. Reliab. 54(8): 1500-1510 (2014) - 2013
- [j27]Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53(6): 867-871 (2013) - [j26]V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. Microelectron. Reliab. 53(9-11): 1243-1246 (2013) - [j25]Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications. Microelectron. Reliab. 53(9-11): 1247-1251 (2013) - 2012
- [j24]Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. Microelectron. Reliab. 52(9-10): 1924-1927 (2012) - [j23]Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen:
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures. Microelectron. Reliab. 52(9-10): 2110-2114 (2012) - [c3]Carmen G. Almudéver, Antonio Rubio, Javier Martín-Martínez, Albert Crespo-Yepes, Rosana Rodríguez, Montserrat Nafría:
Shape-shifting digital hardware concept: Towards a new adaptive computing system. AHS 2012: 167-173 - [c2]Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Unified characterization of RTN and BTI for circuit performance and variability simulation. ESSDERC 2012: 266-269 - 2010
- [j22]Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. Microelectron. Reliab. 50(9-11): 1263-1266 (2010) - [j21]Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton:
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectron. Reliab. 50(9-11): 1312-1315 (2010)
2000 – 2009
- 2009
- [j20]Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. Microelectron. Reliab. 49(9-11): 1024-1028 (2009) - [j19]Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani:
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectron. Reliab. 49(9-11): 1188-1191 (2009) - 2008
- [j18]W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Microelectron. Reliab. 48(8-9): 1521-1524 (2008) - [c1]Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, Montserrat Nafría:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE 2008: 1322-1327 - 2007
- [j17]Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions. Microelectron. Reliab. 47(4-5): 544-547 (2007) - [j16]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Effect of oxide breakdown on RS latches. Microelectron. Reliab. 47(4-5): 581-584 (2007) - [j15]Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis:
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectron. Reliab. 47(4-5): 665-668 (2007) - [j14]Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. Microelectron. Reliab. 47(9-11): 1349-1352 (2007) - [j13]Mario Lanza, Marc Porti, Montserrat Nafría, Guenther Benstetter, Werner Frammelsberger, Heiko Ranzinger, E. Lodermeier, G. Jaschke:
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM. Microelectron. Reliab. 47(9-11): 1424-1428 (2007) - 2006
- [j12]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. 46(9-11): 1608-1611 (2006) - 2005
- [j11]X. Blasco, Montserrat Nafría, Xavier Aymerich, J. Pétry, Wilfried Vandervorst:
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. Microelectron. Reliab. 45(5-6): 811-814 (2005) - [j10]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. Microelectron. Reliab. 45(5-6): 861-864 (2005) - [j9]Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. Microelectron. Reliab. 45(9-11): 1390-1393 (2005) - 2004
- [j8]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich:
A new approach to the modeling of oxide breakdown on CMOS circuits. Microelectron. Reliab. 44(9-11): 1519-1522 (2004) - [j7]Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectron. Reliab. 44(9-11): 1523-1528 (2004) - 2003
- [j6]Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. Microelectron. Reliab. 43(8): 1203-1209 (2003) - [j5]Marc Porti, Montserrat Nafría, Xavier Aymerich:
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectron. Reliab. 43(9-11): 1501-1505 (2003) - 2002
- [j4]X. Blasco, Montserrat Nafría, Xavier Aymerich:
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures. Microelectron. Reliab. 42(9-11): 1513-1516 (2002) - 2001
- [j3]Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. Microelectron. Reliab. 41(7): 1011-1013 (2001) - [j2]Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger:
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. Microelectron. Reliab. 41(7): 1041-1044 (2001) - [j1]Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich:
Characterising the surface roughness of AFM grown SiO2 on Si. Microelectron. Reliab. 41(7): 1077-1079 (2001)
Coauthor Index
Elisenda Roca
aka: Elisenda Roca Moreno
aka: Elisenda Roca Moreno
[c36] [c35] [j38] [c34] [c33] [j36] [j35] [j34] [c32] [j33] [j32] [c31] [c30] [c29] [c28] [c27] [c26] [c25] [c24] [c23] [c22] [c21] [c20] [c19] [c18] [c17] [c16] [c15] [c14] [j30] [c13] [c12] [c11] [c10] [c9] [c8] [j29] [c6] [c5] [j28] [j26] [j25] [j24] [c3] [c2] [j22] [j20] [c1] [j17] [j16] [j15] [j14] [j12] [j10] [j8] [j3]
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