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2020 – today
- 2024
[c9]Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3- 2023
- [c8]Maximilian W. Feil
, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10 - 2022
- [c7]Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser:
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS 2022: 3 - 2021
- [c6]Judith Berens, Thomas Aichinger:
A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs. IRPS 2021: 1-5 - [c5]Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger:
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS 2021: 1-7 - 2020
- [c4]Thomas Aichinger, Matthias Schmidt:
Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. IRPS 2020: 1-6 - [c3]Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser:
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS 2020: 1-7 - [c2]Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher:
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. IRPS 2020: 1-6
2010 – 2019
- 2018
- [j5]Thomas Aichinger, Gerald Rescher, Gregor Pobegen:
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80: 68-78 (2018) - [c1]Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger:
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS 2018: 3 - 2013
- [j4]Johannes Grinschgl, Armin Krieg, Christian Steger, Reinhold Weiss, Holger Bock, Josef Haid, Thomas Aichinger, Christiane Ulbricht:
Case study on multiple fault dependability and security evaluations. Microprocess. Microsystems 37(2): 218-227 (2013) - [j3]Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53(7): 937-946 (2013) - 2011
- [j2]Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel:
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51(9-11): 1530-1534 (2011)
2000 – 2009
- 2008
- [j1]Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
On the temperature dependence of NBTI recovery. Microelectron. Reliab. 48(8-9): 1178-1184 (2008)
Coauthor Index
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