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Veronique Sousa
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2020 – today
- 2022
- [c7]Ahmed Trabelsi, Carlo Cagli, Tifenn Hirtzlin, Olga Cueto, Marie Claire Cyrille, Elisa Vianello, Valentina Meli, Veronique Sousa, Guillaume Bourgeois, François Andrieu:
Frequency modulation of conductance level in PCM device for neuromorphic applications. ESSCIRC 2022: 129-132 - 2021
- [c6]Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo:
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS 2021: 1-8
2010 – 2019
- 2018
- [c5]Anthonin Verdy, Gabriele Navarro, Mathieu Bernard, Sophie Chevalliez, Niccolo Castellani, Emmanuel Nolot, Julien Garrione, Pierre Noe, Guillaume Bourgeois, Veronique Sousa, Marie Claire Cyrille, Etienne Nowak:
Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance. IRPS 2018: 6 - 2017
- [j2]Cristian Zambelli, Gabriele Navarro, Veronique Sousa, Ioan Lucian Prejbeanu, Luca Perniola:
Phase Change and Magnetic Memories for Solid-State Drive Applications. Proc. IEEE 105(9): 1790-1811 (2017) - [c4]Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola:
Innovative GeS2/Sb2Te3 based phase change memory for low power applications. NVMTS 2017: 1-4 - 2015
- [c3]Sarra Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, Martin Coué, Luca Perniola, P. Zuliani, Roberto Annunziata:
Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements. IRPS 2015: 1 - 2012
- [j1]Gabriele Navarro, Sarra Souiki, Alain Persico, Veronique Sousa, Jean-François Nodin, Carine Jahan, François Aussenac, Vincent Delaye, Olga Cueto, Luca Perniola, Barbara De Salvo:
High temperature reliability of μtrench Phase-Change Memory devices. Microelectron. Reliab. 52(9-10): 1928-1931 (2012) - [c2]Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo:
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. ESSDERC 2012: 286-289 - 2011
- [c1]Manan Suri, Veronique Sousa, Luca Perniola, Dominique Vuillaume, Barbara De Salvo:
Phase change memory for synaptic plasticity application in neuromorphic systems. IJCNN 2011: 619-624
Coauthor Index
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