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Hiroaki Honjo
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2020 – today
- 2021
- [j7]Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu:
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition. IEEE J. Solid State Circuits 56(4): 1116-1128 (2021) - 2020
- [c10]Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu:
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [j6]Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu:
A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications. IEEE J. Solid State Circuits 54(11): 2991-3004 (2019) - [c9]Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu:
An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz. ISSCC 2019: 202-204 - 2015
- [j5]Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction. IEEE J. Solid State Circuits 50(2): 476-489 (2015) - [c8]Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Sadahiko Miura, Hiroaki Honjo, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure. VLSIC 2015: 172- - 2014
- [c7]Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi:
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing. ISCAS 2014: 1588-1591 - [c6]Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi:
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications. ISSCC 2014: 184-185 - 2013
- [j4]Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications. IEICE Electron. Express 10(23): 20130772 (2013) - [j3]Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh:
A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme. IEEE J. Solid State Circuits 48(6): 1511-1520 (2013) - [c5]Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating. ISSCC 2013: 194-195 - 2012
- [c4]Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Hiroaki Honjo, Tadahiko Sugibayashi, Hiroki Koike, Takashi Ohsawa, Shunsuke Fukami, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh:
High-speed simulator including accurate MTJ models for spintronics integrated circuit design. ISCAS 2012: 1971-1974 - [c3]Shoun Matsunaga, Sadahiko Miura, Hiroaki Honjou, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
A 3.14 um2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture. VLSIC 2012: 44-45 - [c2]Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh:
1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times. VLSIC 2012: 46-47
2000 – 2009
- 2009
- [c1]Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito, Yuichi Ito, Sadahiko Miura, Yuko Kato, Kaoru Mori, Yasuaki Ozaki, Yosuke Kobayashi, Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Katsumi Suemitsu, Shunsuke Fukami, Hiromitsu Hada, Tadahiko Sugibayashi, Naoki Kasai:
A 90nm 12ns 32Mb 2T1MTJ MRAM. ISSCC 2009: 462-463 - 2007
- [j2]Noboru Sakimura, Tadahiko Sugibayashi, Takeshi Honda, Hiroaki Honjo, Shinsaku Saito, Tetsuhiro Suzuki, Nobuyuki Ishiwata, Shuichi Tahara:
MRAM Cell Technology for Over 500-MHz SoC. IEEE J. Solid State Circuits 42(4): 830-838 (2007) - [j1]Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken-ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Norikazu Ohshima, Hiromitsu Hada, Nobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara:
A 16-Mb Toggle MRAM With Burst Modes. IEEE J. Solid State Circuits 42(11): 2378-2385 (2007)
Coauthor Index
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