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ORCIDCuong Trinh
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2020 – today
- 2024
[j6]Bao Huynh, N. T. Tung
, Trinh D. D. Nguyen, Cuong Trinh, Václav Snásel, Loan T. T. Nguyen:
New approaches for mining high utility itemsets with multiple utility thresholds. Appl. Intell. 54(11-12): 767-790 (2024)- 2022
- [j5]Cuong Trinh, Bao Huynh, Moazam Bidaki, Amir Masoud Rahmani, Mehdi Hosseinzadeh, Mohammad Masdari:
Optimized fuzzy clustering using moth-flame optimization algorithm in wireless sensor networks. Artif. Intell. Rev. 55(3): 1915-1945 (2022) - 2020
- [j4]Mehdi Hosseinzadeh, Jan Lansky, Amir Masoud Rahmani, Cuong Trinh, Masoumeh Safkhani, Nasour Bagheri, Bao Huynh:
A New Strong Adversary Model for RFID Authentication Protocols. IEEE Access 8: 125029-125045 (2020) - [j3]Mehdi Hosseinzadeh, Omed Hassan Ahmed, Sarkar Hasan Ahmed, Cuong Trinh, Nasour Bagheri, Saru Kumari, Jan Lansky, Bao Huynh:
An Enhanced Authentication Protocol for RFID Systems. IEEE Access 8: 126977-126987 (2020) - [j2]Cuong Trinh, Bao Huynh, Jan Lansky, Stanislava Mildeová, Masoumeh Safkhani, Nasour Bagheri, Saru Kumari, Mehdi Hosseinzadeh:
A Novel Lightweight Block Cipher-Based Mutual Authentication Protocol for Constrained Environments. IEEE Access 8: 165536-165550 (2020) - [c4]Nguyen Thi Thuy Loan, Trinh D. D. Nguyen, Anh Nguyen, Phuoc-Nghia Tran, Cuong Trinh, Bao Huynh, Bay Vo:
Efficient Method for Mining High-Utility Itemsets Using High-Average Utility Measure. ICCCI 2020: 305-315
2010 – 2019
- 2018
- [j1]Bao Huynh, Cuong Trinh, Huy Minh Huynh, Thien-Trang Van, Bay Vo, Václav Snásel:
An efficient approach for mining sequential patterns using multiple threads on very large databases. Eng. Appl. Artif. Intell. 74: 242-251 (2018) - 2012
- [c3]Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Makoto Miakashi, Naoki Kobayashi, M. Inagaki, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, Masaki Nakagawa, Mitsuaki Honma, Naofumi Abiko, Mitsumasa Koyanagi, Masahiro Yoshihara, Kazumi Ino, Mitsuhiro Noguchi, Teruhiko Kamei, Yosuke Kato, Shingo Zaitsu, Hiroaki Nasu, Takuya Ariki, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, Gertjan Hemink, Farookh Moogat, Cuong Trinh, Masaaki Higashitani, Tuan Pham, Kousuke Kanazawa:
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. ISSCC 2012: 422-424 - [c2]Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Teruhiko Kamei, Masaaki Higashitani, Tuan Pham, Mitsuaki Honma, Yoshihisa Watanabe, Kazumi Ino, Binh Le, Byungki Woo, Khin Htoo, Taiyuan Tseng, Long Pham, Frank Tsai, Kwang-Ho Kim, Yi-Chieh Chen, Min She, Jonghak Yuh, Alex Chu, Chen Chen, Ruchi Puri, Hung-Szu Lin, Yi-Fang Chen, William Mak, Jonathan Huynh, Jim Chan, Mitsuyuki Watanabe, Daniel Yang, Grishma Shah, Pavithra Souriraj, Dinesh Tadepalli, Tenugu Suman, Ray Gao, Viski Popuri, Behdad Azarbayjani, Ravindra Madpur, James Lan, Emilio Yero, Feng Pan, Patrick Hong, Jang Yong Kang, Farookh Moogat, Yupin Fong, Raul Cernea, Sharon Huynh, Cuong Trinh, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader:
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. ISSCC 2012: 436-437
2000 – 2009
- 2009
- [c1]Cuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, Kazunori Kanebako, Susumu Yoshikawa, W. Igarashi, Atsushi Inoue, T. Takahashi, Yukio Komatsu, C. Suzuki, Kousuke Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, Mark Murin, Mark Shlick, Menahem Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader:
A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS. ISSCC 2009: 246-247
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