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2020 – today
- 2023
[i4]Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Valeria Bragaglia, Youri Popoff, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein:
A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory. CoRR abs/2309.12051 (2023)- [i3]Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein:
A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory. CoRR abs/2309.12061 (2023) - [i2]Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein:
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. CoRR abs/2309.12070 (2023) - 2022
- [j1]Laura Bégon-Lours
, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein:
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights. Neuromorph. Comput. Eng. 2(2): 24001 (2022) - [c5]Tommaso Stecconi, Youri Popoff, Roberto Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia:
Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. DRC 2022: 1-2 - [c4]Tommaso Stecconi, Youri Popoff, Roberto Guido, Donato Francesco Falcone, Mattia Halter, Marilyne Sousa, Folkert Horst, Antonio La Porta, Bert J. Offrein, Valeria Bragaglia:
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM. ESSDERC 2022: 297-300 - 2021
- [c3]Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein:
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. ESSCIRC 2021: 87-90 - [c2]Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein:
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. ESSDERC 2021: 87-90 - [c1]Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Valeria Bragaglia, Youri Popoff, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert J. Offrein:
A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory. IMW 2021: 1-4 - 2020
- [i1]Mattia Halter, Laura Bégon-Lours, Valeria Bragaglia, Marilyne Sousa, Bert Jan Offrein, Stefan Abel, Mathieu Luisier, Jean Fompeyrine:
A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights. CoRR abs/2001.06475 (2020)
Coauthor Index
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