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Francisco Jimenez-Molinos Francisco Jiménez-Molinos
M. Carmen Aguilera-Morillo Ana M. Aguilera Francisco Jiménez-Molinos Juan Bautista Roldán Stochastic modeling of Random Access Memories reset transitions. 2024 abs/2402.05209 CoRR https://doi.org/10.48550/arXiv.2402.05209 db/journals/corr/corr2402.html#abs-2402-05209
Juan Bautista Roldán Enrique Miranda 0002 David Maldonado Alexey N. Mikhaylov Nikolay V. Agudov Alexander A. Dubkov Maria N. Koryazhkina Mireia Bargallo González Marco A. Villena Samuel Poblador Mercedes Saludes-Tapia Rodrigo Picos Francisco Jiménez-Molinos Stavros G. Stavrinides Emili Salvador Francisco J. Alonso Francesca Campabadal Bernardo Spagnolo Mario Lanza Leon O. Chua Variability in Resistive Memories. 2023 June 5 Adv. Intell. Syst. 6 https://doi.org/10.1002/aisy.202200338 db/journals/aisy/aisy5.html#RoldanMMMADKGVPSPJSSACSLC23
Pablo Alex Lázaro Ignacio Jiménez Gallo Juan Roldán Aranda Alberto A. Del Barrio García Guillermo Botella Juan Francisco Jiménez-Molinos Design and simulation of memristor-based neural networks. 2023 abs/2306.11678 CoRR https://doi.org/10.48550/arXiv.2306.11678 db/journals/corr/corr2306.html#abs-2306-11678
David Maldonado Francisco Jiménez-Molinos Juan Bautista Roldán M. B. González Francesca Campabadal An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance. 1-6 2022 DCIS https://doi.org/10.1109/DCIS55711.2022.9970163 conf/dcis/2022 db/conf/dcis/dcis2022.html#MaldonadoJRGC22 Germán Vaquero Francisco Jiménez-Molinos Juan Bautista Roldán Hardware implementation of self-organizing maps using memristors, a simulation study. 1-6 2022 DCIS https://doi.org/10.1109/DCIS55711.2022.9970139 conf/dcis/2022 db/conf/dcis/dcis2022.html#VaqueroJR22
Ana M. Aguilera Christian Acal M. Carmen Aguilera-Morillo Francisco Jiménez-Molinos Juan Bautista Roldán Homogeneity problem for basis expansion of functional data with applications to resistive memories. 41-51 2021 186 Math. Comput. Simul. https://doi.org/10.1016/j.matcom.2020.05.018 db/journals/mcs/mcs186.html#AguileraAAJR21
Juan Bautista Roldán David Maldonado Francisco J. Alonso Andrés M. Roldán Fei Hui Yuanyuan Shi Francisco Jiménez-Molinos Ana M. Aguilera Mario Lanza Time series modeling of the cycle-to-cycle variability in h-BN based memristors. 1-5 2021 IRPS https://doi.org/10.1109/IRPS46558.2021.9405100 conf/irps/2021 db/conf/irps/irps2021.html#RoldanMARHSJAL21 Gerardo González-Cordero M. B. González Francesca Campabadal Francisco Jiménez-Molinos Juan Bautista Roldán A physically based SPICE model for RRAMs including RTN. 1-6 2020 DCIS https://doi.org/10.1109/DCIS51330.2020.9268665 conf/dcis/2020 db/conf/dcis/dcis2020.html#Gonzalez-Cordero20 Antonio J. Pérez-Ávila Gerardo González-Cordero Eduardo Pérez Emilio Pérez-Bosch Quesada Mamathamba Kalishettyhalli Mahadevaiaha Christian Wenger Juan Bautista Roldán Francisco Jiménez-Molinos Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation. 1-6 2020 DCIS https://doi.org/10.1109/DCIS51330.2020.9268652 conf/dcis/2020 db/conf/dcis/dcis2020.html#Perez-AvilaGPQM20 Mireia Bargallo González Marcos Maestro-Izquierdo Francesca Campabadal Samuel Aldana Francisco Jiménez-Molinos Juan Bautista Roldán Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. 1-4 2020 IRPS https://doi.org/10.1109/IRPS45951.2020.9128961 conf/irps/2020 db/conf/irps/irps2020.html#GonzalezMCAJR20 David Maldonado Juan Bautista Roldán Andrés M. Roldán Francisco Jiménez-Molinos Fei Hui Y. Shi Xu Jing Chao Wen Mario Lanza Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. 1-5 2020 IRPS https://doi.org/10.1109/IRPS45951.2020.9128325 conf/irps/2020 db/conf/irps/irps2020.html#MaldonadoRRJHSJ20 Juan Bautista Roldán David Maldonado Francisco Jiménez-Molinos Christian Acal Juan Eloy Ruiz-Castro Ana M. Aguilera Fei Hui J. Kong Y. Shi Xu Jing Chao Wen Marco Antonio Villena Mario Lanza Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages. 1-5 2020 IRPS https://doi.org/10.1109/IRPS45951.2020.9129147 conf/irps/2020 db/conf/irps/irps2020.html#RoldanMJARAHKSJ20
Christian Acal Juan Eloy Ruiz-Castro Ana M. Aguilera Francisco Jimenez-Molinos Juan Bautista Roldán Phase-type distributions for studying variability in resistive memories. 23-32 2019 345 J. Comput. Appl. Math. https://doi.org/10.1016/j.cam.2018.06.010 db/journals/jcam/jcam345.html#AcalRAJR19
Domingo Barrera María J. Ibáñez Francisco Jimenez-Molinos Andrés M. Roldán Juan Bautista Roldán A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain. 326-333 2019 354 J. Comput. Appl. Math. https://doi.org/10.1016/j.cam.2017.12.020 db/journals/jcam/jcam354.html#BarreraIJRR19
M. Carmen Aguilera-Morillo Ana M. Aguilera Francisco Jimenez-Molinos Juan Bautista Roldán Stochastic modeling of Random Access Memories reset transitions. 197-209 2019 159 Math. Comput. Simul. https://doi.org/10.1016/j.matcom.2018.11.016 db/journals/mcs/mcs159.html#Aguilera-Morillo19
María J. Ibáñez Francisco Jimenez-Molinos Juan Bautista Roldán Rafael José Yáñez García Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials. 120-130 2019 164 Math. Comput. Simul. https://doi.org/10.1016/j.matcom.2018.09.028 db/journals/mcs/mcs164.html#IbanezJRG19
Mohamad Moner Al Chawa Rodrigo Picos Juan Bautista Roldán Francisco Jimenez-Molinos Marco Antonio Villena Carol de Benito Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach. 29-38 2018 46 Int. J. Circuit Theory Appl. 1 https://doi.org/10.1002/cta.2397 db/journals/ijcta/ijcta46.html#ChawaPRJVB18
Ana M. Aguilera M. C. Aguilera-Morillo Francisco Jiménez-Molinos Juan Bautista Roldán Modelling Resistive Random Access Memories by means of Functional Principal Component Analysis. 64-73 2017 MDA conf/massdata/2017 db/conf/massdata/mda2017.html#AguileraAJR17
Rodrigo Picos Juan Bautista Roldán Mohamad Moner Al Chawa Pedro García Fernández Francisco Jimenez-Molinos Eugeni García-Moreno Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors. 2017 abs/1702.01533 CoRR http://arxiv.org/abs/1702.01533 db/journals/corr/corr1702.html#PicosRCFJG17
Andreas Gehring Francisco Jimenez-Molinos Hans Kosina A. Palma F. Gámiz Siegfried Selberherr Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. 1495-1500 2003 43 Microelectron. Reliab. 9-11 https://doi.org/10.1016/S0026-2714(03)00265-8 https://www.wikidata.org/entity/Q62600405 db/journals/mr/mr43.html#GehringJKPGS03
Christian Acal Nikolay V. Agudov Ana M. Aguilera M. C. Aguilera-MorilloM. Carmen Aguilera-Morillo Samuel Aldana Francisco J. Alonso Juan Roldán Aranda Domingo Barrera Alberto A. Del BarrioAlberto A. Del Barrio García Carol de Benito Francesca Campabadal Mohamad Moner Al Chawa Leon O. Chua Alexander A. Dubkov Pedro García Fernández Ignacio Jiménez Gallo F. Gámiz Rafael José Yáñez García Eugenio García-MorenoEugeni García-Moreno Andreas Gehring M. B. GonzálezMireia Bargallo González Gerardo González-Cordero Fei Hui María J. Ibáñez Xu Jing Guillermo Botella Juan J. Kong Maria N. Koryazhkina Hans Kosina Mario Lanza Pablo Alex Lázaro Marcos Maestro-Izquierdo Mamathamba Kalishettyhalli Mahadevaiaha David Maldonado Alexey N. Mikhaylov Enrique Miranda 0002 A. Palma Eduardo Pérez Antonio J. Pérez-Ávila Rodrigo Picos Samuel Poblador Emilio Pérez-Bosch Quesada Andrés M. Roldán Juan Bautista Roldán Juan Eloy Ruiz-Castro Mercedes Saludes-Tapia Emili Salvador Siegfried Selberherr Y. Shi Yuanyuan Shi Bernardo Spagnolo Stavros G. Stavrinides Germán Vaquero Marco A. Villena Marco Antonio Villena Chao Wen Christian Wenger