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dblp: Jeong-Hyuk Choi https://dblp.org/pid/156/3935.html dblp person page RSS feed Wed, 04 Dec 2024 20:16:14 +0100 en-US daily 1 released under the CC0 1.0 license dblp@dagstuhl.de (dblp team) dblp@dagstuhl.de (dblp team) Computers/Computer_Science/Publications/Bibliographies http://www.rssboard.org/rss-specification https://dblp.org/img/logo.144x51.pngdblp: Jeong-Hyuk Choihttps://dblp.org/pid/156/3935.html14451 A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate.https://doi.org/10.1109/JSSC.2015.2474117Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. IEEE J. Solid State Circuits 51(1): 204-212 (2016)]]>https://dblp.org/rec/journals/jssc/JeongIKNSCYKKPK16Fri, 01 Jan 2016 00:00:00 +0100 7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.https://doi.org/10.1109/ISSCC.2016.7417941Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. ISSCC 2016: 130-131]]>https://dblp.org/rec/conf/isscc/KangJKKCKRKLKLY16Fri, 01 Jan 2016 00:00:00 +0100 7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.https://doi.org/10.1109/ISSCC.2016.7417945Seungjae Lee

, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee

, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. ISSCC 2016: 138-139]]>https://dblp.org/rec/conf/isscc/LeeLPPYKLKLKCCY16Fri, 01 Jan 2016 00:00:00 +0100 Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming.https://doi.org/10.1109/JSSC.2014.2352293Ki-Tae Park, Sangwan Nam, Dae-Han Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Minsu Kim, Hyun Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dae-Seok Byeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Jeong-Hyuk Choi, Kinam Kim:
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. IEEE J. Solid State Circuits 50(1): 204-213 (2015)]]>https://dblp.org/rec/journals/jssc/ParkNKKLCCKKKPSKPLYKSARKYKSBCHKCK15Thu, 01 Jan 2015 00:00:00 +0100 7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.https://doi.org/10.1109/ISSCC.2015.7062960Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung-Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. ISSCC 2015: 1-3]]>https://dblp.org/rec/conf/isscc/ImJKNSCYKKPKPYH15Thu, 01 Jan 2015 00:00:00 +0100 7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip.https://doi.org/10.1109/ISSCC.2015.7062964Hyun-Jin Kim, Jeong-Don Lim, Jang-Woo Lee, Dae-Hoon Na

, Joon-Ho Shin, Chae-Hoon Kim, Seungwoo Yu, Ji-Yeon Shin, Seon-Kyoo Lee

, Devraj Rajagopal, Sang-Tae Kim, Kyeong-Tae Kang, Jeong-Joon Park, Yongjin Kwon, Min-Jae Lee, Sunghoon Kim

, Seunghoon Shin, Hyunggon Kim, Jin-Tae Kim, Ki-Sung Kim, Han-Sung Joo, Chanjin Park, Jae-Hwan Kim, Man-Joong Lee, Do-Kook Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip. ISSCC 2015: 1-3]]>https://dblp.org/rec/conf/isscc/KimLLNSKYSLRKKP15Thu, 01 Jan 2015 00:00:00 +0100 19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming.https://doi.org/10.1109/ISSCC.2014.6757458Ki-Tae Park, Jin-Man Han, Dae-Han Kim, Sangwan Nam, Kihwan Choi, Minsu Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun Wook Park, Sang-Won Shim, Hyun-Jun Yoon, Doo-Hyun Kim, Sang-Won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyunggon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jae-hoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kyehyun Kyung, Jeong-Hyuk Choi:
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. ISSCC 2014: 334-335]]>https://dblp.org/rec/conf/isscc/ParkHKNCKKLCKCK14Wed, 01 Jan 2014 00:00:00 +0100 A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications.https://doi.org/10.1109/JSSC.2003.818143June Lee, Sung-Soo Lee, Oh-Suk Kwon, Kyeong-Han Lee, Dae-Seok Byeon, In-Young Kim, Kyoung-Hwa Lee, Young-Ho Lim, Byung-Soon Choi, Jong-Sik Lee, Wang-Chul Shin, Jeong-Hyuk Choi, Kang-Deog Suh:
A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications. IEEE J. Solid State Circuits 38(11): 1934-1942 (2003)]]>https://dblp.org/rec/journals/jssc/LeeLKLBKLLCLSCS03Wed, 01 Jan 2003 00:00:00 +0100