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Stefan Slesazeck
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2020 – today
- 2024
- [i8]Adnan Mehonic, Daniele Ielmini, Kaushik Roy, Onur Mutlu, Shahar Kvatinsky, Teresa Serrano-Gotarredona, Bernabé Linares-Barranco, Sabina Spiga, Sergey Savelev, Alexander G. Balanov, Nitin Chawla, Giuseppe Desoli, Gerardo Malavena, Christian Monzio Compagnoni, Zhongrui Wang, J. Joshua Yang, Syed Ghazi Sarwat, Abu Sebastian, Thomas Mikolajick, Beatriz Noheda, Stefan Slesazeck, Bernard Dieny, Tuo-Hung Hou, Akhil Varri, Frank Brückerhoff-Plückelmann, Wolfram H. P. Pernice, Xixiang Zhang, Sebastian Pazos, Mario Lanza, Stefan Wiefels, Regina Dittmann, Wing H. Ng, Mark Buckwell, Horatio Cox, Daniel J. Mannion, Anthony J. Kenyon, Yingming Lu, Yuchao Yang, Damien Querlioz, Louis Hutin, Elisa Vianello, Sayeed Shafayet Chowdhury, Piergiulio Mannocci, Yimao Cai, Zhong Sun, Giacomo Pedretti, John Paul Strachan, Dmitri B. Strukov, Manuel Le Gallo, Stefano Ambrogio, Ilia Valov, Rainer Waser:
Roadmap to Neuromorphic Computing with Emerging Technologies. CoRR abs/2407.02353 (2024) - 2023
- [j7]Stefan Slesazeck, Thomas Mikolajick:
Focus issue on hafnium oxide based neuromorphic devices. Neuromorph. Comput. Eng. 3(2): 20401 (2023) - [c40]Suzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick, David Esseni, Francesco Driussi, Stefan Slesazeck:
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. DRC 2023: 1-2 - [c39]John Reuben, Dietmar Fey, Stefan Slesazeck:
A Reference-less Sense Amplifier to Sense pA Currents in Ferroelectric Tunnel Junction Memories. MOCAST 2023: 1-4 - [c38]Stefan Slesazeck, Suzanne Lancaster, John Reuben, Shima Hosseinzadeh, Dietmar Fey, Thomas Mikolajick:
Hyper Dimensional Computing with Ferroelectric Tunneling Junctions. NANOARCH 2023: 3:1-3:2 - 2022
- [j6]Erika Covi, Halid Mulaosmanovic, Benjamin Max, Stefan Slesazeck, Thomas Mikolajick:
Ferroelectric-based synapses and neurons for neuromorphic computing. Neuromorph. Comput. Eng. 2(1): 12002 (2022) - [j5]Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Steve B. Furber, Emre Neftci, Franz Scherr, Wolfgang Maass, Srikanth Ramaswamy, Jonathan Tapson, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Gabriella Panuccio, Mufti Mahmud, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds:
2022 roadmap on neuromorphic computing and engineering. Neuromorph. Comput. Eng. 2(2): 22501 (2022) - [j4]Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky:
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory. IEEE Trans. Circuits Syst. I Regul. Pap. 69(4): 1595-1605 (2022) - [c37]Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck:
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide. DRC 2022: 1-2 - [c36]Suzanne Lancaster, Quang T. Duong, Erika Covi, Thomas Mikolajick, Stefan Slesazeck:
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing. ESSCIRC 2022: 137-140 - [c35]Mattia Segatto, Marco Massarotto, Suzanne Lancaster, Quang T. Duong, Antonio Affanni, Riccardo Fontanini, Francesco Driussi, Daniel Lizzit, Thomas Mikolajick, Stefan Slesazeck, David Esseni:
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions. ESSDERC 2022: 340-343 - [c34]Paolo Gibertini, Luca Fehlings, Suzanne Lancaster, Quang T. Duong, Thomas Mikolajick, Catherine Dubourdieu, Stefan Slesazeck, Erika Covi, Veeresh Deshpande:
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron. ICECS 2022 2022: 1-4 - [c33]Eter Mgeladze, Melanie Herzig, Richard Schroedter, Ronald Tetzlaff, Thomas Mikolajick, Stefan Slesazeck:
An Analog Memristive and Memcapacitive Device for Neuromorphic Computing. ICECS 2022 2022: 1-4 - [c32]Shyam Narayanan, Erika Covi, Viktor Havel, Charlotte Frenkel, Suzanne Lancaster, Quang T. Duong, Stefan Slesazeck, Thomas Mikolajick, Melika Payvand, Giacomo Indiveri:
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices. ISCAS 2022: 717-721 - [c31]Richard Schroedter, Eter Mgeladze, Melanie Herzig, Alon Ascoli, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff:
Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device. ISCAS 2022: 1097-1101 - [c30]Richard Schroedter, Ahmet Samil Demirkol, Alon Ascoli, Ronald Tetzlaff, Eter Mgeladze, Melanie Herzig, Stefan Slesazeck, Thomas Mikolajick:
SPICE Compact Model for an Analog Switching Niobium Oxide Memristor. MOCAST 2022: 1-4 - [i7]Shyam Narayanan, Erika Covi, Viktor Havel, Charlotte Frenkel, Suzanne Lancaster, Quang T. Duong, Stefan Slesazeck, Thomas Mikolajick, Melika Payvand, Giacomo Indiveri:
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices. CoRR abs/2202.04049 (2022) - [i6]Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky:
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory. CoRR abs/2205.12061 (2022) - [i5]Suzanne Lancaster, Quang T. Duong, Erika Covi, Thomas Mikolajick, Stefan Slesazeck:
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing. CoRR abs/2209.10437 (2022) - [i4]Paolo Gibertini, Luca Fehlings, Suzanne Lancaster, Quang T. Duong, Thomas Mikolajick, Catherine Dubourdieu, Stefan Slesazeck, Erika Covi, Veeresh Deshpande:
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron. CoRR abs/2211.02598 (2022) - 2021
- [j3]Martin Weiher, Melanie Herzig, Ronald Tetzlaff, Alon Ascoli, Thomas Mikolajick, Stefan Slesazeck:
Improved Vertex Coloring With NbOₓ Memristor-Based Oscillatory Networks. IEEE Trans. Circuits Syst. I Regul. Pap. 68(5): 2082-2095 (2021) - [c29]Cédric Marchand, Ian O'Connor, Mayeul Cantan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick:
FeFET based Logic-in-Memory: an overview. DTIS 2021: 1-6 - [c28]Riccardo Fontanini, Justine Barbot, Mattia Segatto, Suzanne Lancaster, Quang T. Duong, Francesco Driussi, Laurent Grenouillet, François Triozon, Jean Coignus, Thomas Mikolajick, Stefan Slesazeck, David Esseni:
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. ESSDERC 2021: 255-258 - [c27]Dietmar Fey, John Reuben, Stefan Slesazeck:
Comparative study of usefulness of FeFET, FTJ and ReRAM technology for ternary arithmetic. ICECS 2021: 1-6 - [c26]Halid Mulaosmanovic, Patrick D. Lomenzo, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, Benjamin Max:
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. IRPS 2021: 1-6 - [c25]Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck:
Ferroelectric Tunneling Junctions for Edge Computing. ISCAS 2021: 1-5 - [c24]Alon Ascoli, Martin Weiher, Ronald Tetzlaff, Melanie Herzig, Stefan Slesazeck, Thomas Mikolajick:
Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors. MOCAST 2021: 1-8 - [i3]Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Emre Neftci, Srikanth Ramaswamy, Jonathan Tapson, Franz Scherr, Wolfgang Maass, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds:
2021 Roadmap on Neuromorphic Computing and Engineering. CoRR abs/2105.05956 (2021) - [i2]Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing. CoRR abs/2107.00945 (2021) - [i1]Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck:
Ferroelectric Tunneling Junctions for Edge Computing. CoRR abs/2107.01853 (2021) - 2020
- [c23]Evelyn T. Breyer, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays. ISCAS 2020: 1-5
2010 – 2019
- 2019
- [j2]Martin Weiher, Melanie Herzig, Ronald Tetzlaff, Alon Ascoli, Thomas Mikolajick, Stefan Slesazeck:
Pattern Formation With Locally Active S-Type NbOx Memristors. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(7): 2627-2638 (2019) - [c22]Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation. DRC 2019: 97-98 - [c21]Thomas Mikolajick, Halid Mulaosmanovic, Michael Hoffmann, Benjamin Max, Terence Mittmann, Uwe Schroeder, Stefan Slesazeck:
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. DRC 2019: 207-208 - [c20]Sabine Kolodinski, Boli Peng, C. Esposito, Yves Zimmermann, Michael Schröter, Xin Xu, Paolo Valerio Testa, Corrado Carta, Frank Ellinger, Steffen Lehmann, M. Drescher, Clemens Mart, Maciej Wiatr, Wenke Weinreich, Violetta Sessi, Jens Trommer, Talha Chohan, Halid Mulaosmanovic, Walter M. Weber, Stefan Slesazeck:
IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. ESSDERC 2019: 74-77 - [c19]Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dünkel, Martin Trentzsch, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck:
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. ESSDERC 2019: 118-121 - [c18]Jens Trommer, Maik Simon, Stefan Slesazeck, Walter M. Weber, Thomas Mikolajick:
Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent Inputs. ESSDERC 2019: 134-137 - [c17]Bharathwaj Suresh, Martin Bertele, Evelyn T. Breyer, Philipp Klein, Halid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck, Elisabetta Chicca:
Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors. ICECS 2019: 229-232 - [c16]Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck:
Adoption of 2T2C ferroelectric memory cells for logic operation. ICECS 2019: 791-794 - [c15]Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder, Benjamin Max:
Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. NVMTS 2019: 1-8 - 2018
- [c14]Ahmedullah Aziz, Evelyn T. Breyer, An Chen, Xiaoming Chen, Suman Datta, Sumeet Kumar Gupta, Michael Hoffmann, Xiaobo Sharon Hu, Adrian M. Ionescu, Matthew Jerry, Thomas Mikolajick, Halid Mulaosmanovic, Kai Ni, Michael T. Niemier, Ian O'Connor, Atanu Saha, Stefan Slesazeck, Sandeep Krishna Thirumala, Xunzhao Yin:
Computing with ferroelectric FETs: Devices, models, systems, and applications. DATE 2018: 1289-1298 - [c13]Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Domain Formation in Ferroelectric Negative Capacitance Devices. DRC 2018: 1-2 - [c12]Benjamin Max, Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks. ESSDERC 2018: 142-145 - [c11]Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Embedding hafnium oxide based FeFETs in the memory landscape. ICICDT 2018: 121-124 - [c10]Evelyn T. Breyer, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology. ISCAS 2018: 1-5 - [c9]Ian O'Connor, Mayeul Cantan, Cédric Marchand, Bertrand Vilquin, Stefan Slesazeck, Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Bastien Giraud, Jean-Philippe Noel, Adrian M. Ionescu, Igor Stolichnov:
Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices. VLSI-SoC 2018: 180-183 - 2017
- [c8]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe, Lukas M. Eng, Thomas Mikolajick, Uwe Schroeder:
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. ESSDERC 2017: 160-163 - [c7]Stefan Slesazeck, H. Wylezich, Thomas Mikolajick:
Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches. LASCAS 2017: 1-4 - [c6]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. NVMTS 2017: 1-4 - 2016
- [c5]Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick:
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC 2016: 364-368 - [c4]Thomas Mikolajick, H. Wylezich, Hannes Maehne, Stefan Slesazeck:
Versatile resistive switching in niobium oxide. ISCAS 2016: 381-384 - 2015
- [j1]Alon Ascoli, Stefan Slesazeck, Hannes Mähne, Ronald Tetzlaff, Thomas Mikolajick:
Nonlinear Dynamics of a Locally-Active Memristor. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(4): 1165-1174 (2015) - [c3]Johannes Ocker, Stefan Slesazeck, Thomas Mikolajick, S. Buschbeck, S. Günther, E. Yurchuk, R. Hoffmann, V. Beyer:
On the voltage scaling potential of SONOS non-volatile memory transistors. ESSDERC 2015: 118-121 - [c2]Alon Ascoli, Ronald Tetzlaff, Stefan Slesazeck, Hannes Mähne, Thomas Mikolajick:
Stability analysis supports memristor circuit design. ISCAS 2015: 1138-1141 - 2013
- [c1]Andre Wachowiak, Stefan Slesazeck, Paul Jordan, Jürgen Holz, Thomas Mikolajick:
New color sensor concept based on single spectral tunable photodiode. ESSDERC 2013: 127-130
Coauthor Index
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last updated on 2024-10-07 21:08 CEST by the dblp team
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