{"id":"https://openalex.org/W3111921049","doi":"https://doi.org/10.1145/3400302.3415770","title":"Modeling emerging technologies using machine learning","display_name":"Modeling emerging technologies using machine learning","publication_year":2020,"publication_date":"2020-11-02","ids":{"openalex":"https://openalex.org/W3111921049","doi":"https://doi.org/10.1145/3400302.3415770","mag":"3111921049"},"language":"en","primary_location":{"is_oa":true,"landing_page_url":"https://doi.org/10.1145/3400302.3415770","pdf_url":"https://dl.acm.org/doi/pdf/10.1145/3400302.3415770","source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://dl.acm.org/doi/pdf/10.1145/3400302.3415770","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083905801","display_name":"Florian Klemme","orcid":"https://orcid.org/0000-0002-0148-0523"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Florian Klemme","raw_affiliation_strings":["Karlsruhe Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011400532","display_name":"Jannik Prinz","orcid":null},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jannik Prinz","raw_affiliation_strings":["Karlsruhe Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027765192","display_name":"Victor M. van Santen","orcid":"https://orcid.org/0000-0002-6629-4713"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Victor M. van Santen","raw_affiliation_strings":["Karlsruhe Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108423074","display_name":"J\u00f6rg Henkel","orcid":null},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J\u00f6rg Henkel","raw_affiliation_strings":["Karlsruhe Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["University of Stuttgart"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart","institution_ids":["https://openalex.org/I100066346"]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.355,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.772759,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":90},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric Devices for Low-Power Nanoscale Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric Devices for Low-Power Nanoscale Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Nanoelectronics and Transistors","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Atomic Layer Deposition Technology","score":0.9995,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.66097575},{"id":"https://openalex.org/keywords/cmos-scaling","display_name":"CMOS Scaling","score":0.536991},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.43375987}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.74337435},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.66097575},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6157862},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5073852},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4862708},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.43375987},{"id":"https://openalex.org/C113775141","wikidata":"https://www.wikidata.org/wiki/Q428691","display_name":"Computer engineering","level":1,"score":0.34697855},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2880652},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.25524175},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.21989012},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20954141},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12012589},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":true,"landing_page_url":"https://doi.org/10.1145/3400302.3415770","pdf_url":"https://dl.acm.org/doi/pdf/10.1145/3400302.3415770","source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true}],"best_oa_location":{"is_oa":true,"landing_page_url":"https://doi.org/10.1145/3400302.3415770","pdf_url":"https://dl.acm.org/doi/pdf/10.1145/3400302.3415770","source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true},"sustainable_development_goals":[{"score":0.63,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":23,"referenced_works":["https://openalex.org/W1561478292","https://openalex.org/W1590842594","https://openalex.org/W167500274","https://openalex.org/W1991353080","https://openalex.org/W2015424449","https://openalex.org/W2016106189","https://openalex.org/W2070786551","https://openalex.org/W2530130145","https://openalex.org/W2536803352","https://openalex.org/W2557927078","https://openalex.org/W2560467685","https://openalex.org/W2584298940","https://openalex.org/W2604938527","https://openalex.org/W2742220040","https://openalex.org/W2891852074","https://openalex.org/W2898122376","https://openalex.org/W2898581147","https://openalex.org/W2947630138","https://openalex.org/W2964399176","https://openalex.org/W2990283237","https://openalex.org/W3024722044","https://openalex.org/W4288017392","https://openalex.org/W433287374"],"related_works":["https://openalex.org/W4289106041","https://openalex.org/W3173836265","https://openalex.org/W2953198199","https://openalex.org/W2901469270","https://openalex.org/W2161299897","https://openalex.org/W2119901732","https://openalex.org/W2103773526","https://openalex.org/W2066671769","https://openalex.org/W2027806590","https://openalex.org/W1989891105"],"abstract_inverted_index":{"Compact":[0],"models":[1,61],"of":[2,32,62,102,109,140,197],"transistors":[3,172],"act":[4],"as":[5,126,156],"the":[6,78,99,137],"link":[7],"between":[8,80],"semiconductor":[9,110],"technology":[10,48,144],"and":[11,21,26,84,162,183,192],"circuit":[12,15,34,36],"design":[13],"via":[14],"simulations.":[16],"Unfortunately,":[17],"compact":[18,59,87],"model":[19,88],"development":[20],"calibration":[22],"is":[23,160],"a":[24,33,93,103,130],"challenging":[25],"time-intensive":[27],"task,":[28],"hindering":[29],"rapid":[30],"prototyping":[31],"(via":[35],"simulations)":[37],"in":[38],"emerging":[39,119,134],"technologies.":[40],"Moreover,":[41],"foundries":[42],"want":[43],"to":[44,50,58,76,118,132],"protect":[45],"their":[46],"confidential":[47],"details":[49,146],"prevent":[51],"reverse":[52],"engineering.":[53],"Hence,":[54],"they":[55],"limit":[56],"access":[57],"transistor":[60,106,178,193],"commercial":[63],"technologies":[64],"(e.g.,":[65],"with":[66,185],"Non-Disclosure-Agreements).":[67],"In":[68],"this":[69],"work,":[70],"we":[71,149],"propose":[72,164],"Machine":[73],"Learning":[74],"(ML)":[75],"bridge":[77],"gap":[79],"early":[81],"device":[82],"measurements":[83],"later":[85],"occurring":[86],"development.":[89],"Our":[90,176],"approach":[91,114],"employs":[92],"Neural":[94],"Network":[95],"(NN)":[96],"that":[97],"captures":[98],"electrical":[100,169],"response":[101],"conventional":[104],"FinFET":[105,124,182],"without":[107],"knowledge":[108],"physics.":[111],"Additionally,":[112],"our":[113,157],"can":[115,180],"be":[116],"applied":[117],"technologies,":[120],"using":[121,152],"Negative":[122],"Capacitance":[123],"(NC-FinFET)":[125],"an":[127,186],"example":[128],"for":[129],"(challenging":[131],"model)":[133],"technology.":[135],"Inherently,":[136],"black-box":[138],"nature":[139],"ML":[141],"approaches":[142],"keeps":[143],"manufacturing":[145],"confidential.":[147],"Furthermore,":[148],"show":[150],"how":[151],"solely":[153],"R2":[154,187],"score":[155,188],"fitness":[158,165],"function":[159],"insufficient":[161],"instead":[163],"based":[166],"on":[167],"key":[168],"characteristics":[170,194],"or":[171],"like":[173],"threshold":[174],"voltage.":[175],"NN-based":[177],"modeling":[179],"infer":[181],"NC-FinFET":[184],"larger":[189],"than":[190],"0.99":[191],"within":[195],"5%":[196],"experimental":[198],"data.":[199]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W3111921049","counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":7},{"year":2021,"cited_by_count":2}],"updated_date":"2024-11-06T04:03:52.549165","created_date":"2020-12-21"}
