{"id":"https://openalex.org/W2795181762","doi":"https://doi.org/10.1109/vlsid.2018.106","title":"A Temperature Compensated Read Assist for Low Vmin and High Performance High Density 6T SRAM in FinFET Technology","display_name":"A Temperature Compensated Read Assist for Low Vmin and High Performance High Density 6T SRAM in FinFET Technology","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2795181762","doi":"https://doi.org/10.1109/vlsid.2018.106","mag":"2795181762"},"language":"en","primary_location":{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsid.2018.106","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false},"type":"article","type_crossref":"proceedings-article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056138326","display_name":"Vinay Kumar","orcid":"https://orcid.org/0000-0002-3759-9091"},"institutions":[],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Vinay Kumar","raw_affiliation_strings":["Synopsys India Pvt. Ltd."],"affiliations":[{"raw_affiliation_string":"Synopsys India Pvt. Ltd.","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029374205","display_name":"Ravindra kumar Shrivatava","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ravindra kumar Shrivatava","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5008744589","display_name":"Madhav Mansukh Padaliya","orcid":null},"institutions":[],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Madhav Mansukh Padaliya","raw_affiliation_strings":["Synopsys India Pvt. Ltd."],"affiliations":[{"raw_affiliation_string":"Synopsys India Pvt. Ltd.","institution_ids":[]}]}],"institution_assertions":[],"countries_distinct_count":1,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.126,"has_fulltext":true,"fulltext_origin":"ngrams","cited_by_count":6,"citation_normalized_percentile":{"value":0.287086,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":81,"max":82},"biblio":{"volume":null,"issue":null,"first_page":"447","last_page":"448"},"is_retracted":false,"is_paratext":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Nanoelectronics and Transistors","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Nanoelectronics and Transistors","score":0.9997,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Atomic Layer Deposition Technology","score":0.9994,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-Power VLSI Circuit Design and Optimization","score":0.9992,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/performance-improvement","display_name":"Performance improvement","score":0.54341656},{"id":"https://openalex.org/keywords/cmos-scaling","display_name":"CMOS Scaling","score":0.528794},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.47846198}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.91893893},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6625848},{"id":"https://openalex.org/C77618280","wikidata":"https://www.wikidata.org/wiki/Q1155772","display_name":"Scheme (mathematics)","level":2,"score":0.6015394},{"id":"https://openalex.org/C2778915421","wikidata":"https://www.wikidata.org/wiki/Q3643177","display_name":"Performance improvement","level":2,"score":0.54341656},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5365135},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.5206665},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.47930446},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.47846198},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.43220523},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39013612},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32779944},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.28180963},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16364494},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.06000212},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C21547014","wikidata":"https://www.wikidata.org/wiki/Q1423657","display_name":"Operations management","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsid.2018.106","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.67,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"grants":[],"datasets":[],"versions":[],"referenced_works_count":5,"referenced_works":["https://openalex.org/W2008362573","https://openalex.org/W2014993833","https://openalex.org/W2073818373","https://openalex.org/W2107702386","https://openalex.org/W2922041868"],"related_works":["https://openalex.org/W3185029353","https://openalex.org/W3116379964","https://openalex.org/W2969498307","https://openalex.org/W2915176329","https://openalex.org/W2795181762","https://openalex.org/W2793465010","https://openalex.org/W2310488720","https://openalex.org/W2208608937","https://openalex.org/W2089002058","https://openalex.org/W1909296377"],"abstract_inverted_index":{"A":[0],"low":[1,76,91,94,148],"Vmin,":[2],"6T-SRAM":[3],"is":[4,22,43,78,83,98,133,141],"realized":[5],"in":[6,119],"7nm":[7],"FinFET":[8],"Technology":[9],"using":[10,24],"read":[11],"and":[12],"write":[13],"assist":[14,129],"methods.":[15],"Read":[16,34,49,65,87,101,106,110,128,139],"margin":[17],"of":[18,147],"the":[19,117,126],"SRAM":[20,81,96],"cell":[21],"recovered":[23],"a":[25],"temperature":[26,32,72,77],"compensated":[27,33],"wordline":[28,42],"lowering":[29,40,74],"scheme.":[30],"This":[31,53],"Assist":[35,50,66,88,107,140],"provides":[36],"additional":[37],"advantage":[38,146],"that":[39,47],"on":[41],"almost":[44,134],"process":[45],"independent":[46],"makes":[48,55],"very":[51,79],"robust.":[52],"scheme":[54,108],"design":[56],"free":[57],"from":[58],"tuning":[59],"after":[60],"post":[61],"silicon.":[62],"Since":[63],"Proposed":[64],"circuit":[67],"lowers":[68],"Wordline":[69],"at":[70,75,90],"high":[71],"while":[73],"minimal,":[80],"writability":[82],"not":[84,142],"impacted":[85],"by":[86,100,112],"Circuity":[89],"temperature.":[92],"At":[93],"voltage,":[95],"performance":[97,111],"limited":[99],"cycle":[102],"time.":[103],"The":[104],"proposed":[105,127],"improves":[109],"200%,":[113],"which":[114],"in-turn":[115],"reflects":[116],"gain":[118],"operating":[120,131],"frequency":[121,132],"up":[122],"to":[123,136],"100%.":[124],"In":[125],"implementation":[130],"comparable":[135],"system":[137],"when":[138],"enabled":[143],"with":[144],"added":[145],"voltage":[149],"enablement":[150]},"cited_by_api_url":"https://api.openalex.org/works?filter=cites:W2795181762","counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1}],"updated_date":"2024-10-31T19:09:04.683949","created_date":"2018-04-06"}
