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Link to original content: https://api.crossref.org/works/10.3390/S16081294
{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,25]],"date-time":"2024-07-25T19:53:04Z","timestamp":1721937184254},"reference-count":33,"publisher":"MDPI AG","issue":"8","license":[{"start":{"date-parts":[[2016,8,15]],"date-time":"2016-08-15T00:00:00Z","timestamp":1471219200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sensors"],"abstract":"This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8 \u00d7 16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under \u221232 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e - rms, full well capacity of 8000 e - , and the conversion gain of 75 \u00b5V \/ e - are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination.<\/jats:p>","DOI":"10.3390\/s16081294","type":"journal-article","created":{"date-parts":[[2016,8,15]],"date-time":"2016-08-15T13:47:20Z","timestamp":1471268840000},"page":"1294","source":"Crossref","is-referenced-by-count":6,"title":["Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging"],"prefix":"10.3390","volume":"16","author":[{"given":"Tomislav","family":"Resetar","sequence":"first","affiliation":[{"name":"KU Leuven, ESAT, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium"},{"name":"Imec, Kapeldreef 75, B-3001 Leuven, Belgium"}]},{"given":"Koen","family":"De Munck","sequence":"additional","affiliation":[{"name":"Imec, Kapeldreef 75, B-3001 Leuven, Belgium"}]},{"given":"Luc","family":"Haspeslagh","sequence":"additional","affiliation":[{"name":"Imec, Kapeldreef 75, B-3001 Leuven, Belgium"}]},{"given":"Maarten","family":"Rosmeulen","sequence":"additional","affiliation":[{"name":"Imec, Kapeldreef 75, B-3001 Leuven, Belgium"}]},{"given":"Andreas","family":"S\u00fcss","sequence":"additional","affiliation":[{"name":"Imec, Kapeldreef 75, B-3001 Leuven, Belgium"}]},{"ORCID":"http:\/\/orcid.org\/0000-0003-3415-2275","authenticated-orcid":false,"given":"Robert","family":"Puers","sequence":"additional","affiliation":[{"name":"KU Leuven, ESAT, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium"},{"name":"Imec, Kapeldreef 75, B-3001 Leuven, Belgium"}]},{"given":"Chris","family":"Van Hoof","sequence":"additional","affiliation":[{"name":"KU Leuven, ESAT, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium"},{"name":"Imec, Kapeldreef 75, B-3001 Leuven, Belgium"}]}],"member":"1968","published-online":{"date-parts":[[2016,8,15]]},"reference":[{"key":"ref_1","doi-asserted-by":"crossref","first-page":"926","DOI":"10.1109\/LED.2015.2456067","article-title":"Quanta Image Sensor Jot with Sub 0.3 e\u2212 rms Read Noise and Photon Counting Capability","volume":"36","author":"Ma","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"ref_2","doi-asserted-by":"crossref","first-page":"1344","DOI":"10.1109\/LED.2015.2496359","article-title":"A 0.27 e\u2212 rms Read Noise 220-\u03bcV\/e\u2212 Conversion Gain Reset-Gate-Less CMOS Image Sensor with 0.11-\u03bcm CIS Process","volume":"36","author":"Seo","year":"2015","journal-title":"IEEE Electron Device Lett."},{"key":"ref_3","unstructured":"Yeh, S.F., Chou, K.Y., Tu, H.Y., Chao, C.P., and Hsueh, F.L. 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Proceedings of the 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA.","DOI":"10.1109\/IEDM.2014.7046984"}],"container-title":["Sensors"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/8\/1294\/pdf","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,6,5]],"date-time":"2024-06-05T14:31:45Z","timestamp":1717597905000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.mdpi.com\/1424-8220\/16\/8\/1294"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,8,15]]},"references-count":33,"journal-issue":{"issue":"8","published-online":{"date-parts":[[2016,8]]}},"alternative-id":["s16081294"],"URL":"http:\/\/dx.doi.org\/10.3390\/s16081294","relation":{},"ISSN":["1424-8220"],"issn-type":[{"value":"1424-8220","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,8,15]]}}}