{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,6]],"date-time":"2024-07-06T04:44:42Z","timestamp":1720241082698},"reference-count":35,"publisher":"Elsevier BV","issue":"10","license":[{"start":{"date-parts":[[2009,10,1]],"date-time":"2009-10-01T00:00:00Z","timestamp":1254355200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/tdm\/userlicense\/1.0\/"},{"start":{"date-parts":[[2009,10,1]],"date-time":"2009-10-01T00:00:00Z","timestamp":1254355200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.elsevier.com\/legal\/tdmrep-license"},{"start":{"date-parts":[[2009,10,1]],"date-time":"2009-10-01T00:00:00Z","timestamp":1254355200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-017"},{"start":{"date-parts":[[2009,10,1]],"date-time":"2009-10-01T00:00:00Z","timestamp":1254355200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"},{"start":{"date-parts":[[2009,10,1]],"date-time":"2009-10-01T00:00:00Z","timestamp":1254355200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-012"},{"start":{"date-parts":[[2009,10,1]],"date-time":"2009-10-01T00:00:00Z","timestamp":1254355200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2009,10,1]],"date-time":"2009-10-01T00:00:00Z","timestamp":1254355200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-004"}],"content-domain":{"domain":["elsevier.com","sciencedirect.com"],"crossmark-restriction":true},"short-container-title":["Microelectronics Journal"],"published-print":{"date-parts":[[2009,10]]},"DOI":"10.1016\/j.mejo.2009.06.005","type":"journal-article","created":{"date-parts":[[2009,8,13]],"date-time":"2009-08-13T08:14:17Z","timestamp":1250151257000},"page":"1441-1448","update-policy":"http:\/\/dx.doi.org\/10.1016\/elsevier_cm_policy","source":"Crossref","is-referenced-by-count":46,"title":["A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter"],"prefix":"10.1016","volume":"40","author":[{"given":"K.","family":"Navi","sequence":"first","affiliation":[]},{"given":"V.","family":"Foroutan","sequence":"additional","affiliation":[]},{"given":"M.","family":"Rahimi Azghadi","sequence":"additional","affiliation":[]},{"given":"M.","family":"Maeen","sequence":"additional","affiliation":[]},{"given":"M.","family":"Ebrahimpour","sequence":"additional","affiliation":[]},{"given":"M.","family":"Kaveh","sequence":"additional","affiliation":[]},{"given":"O.","family":"Kavehei","sequence":"additional","affiliation":[]}],"member":"78","reference":[{"issue":"7","key":"10.1016\/j.mejo.2009.06.005_bib1","doi-asserted-by":"crossref","first-page":"780","DOI":"10.1109\/4.303715","article-title":"New efficient designs for XOR and XNOR functions on the transistor level","volume":"29","author":"Wang","year":"1994","journal-title":"IEEE J. of Solid-State Circuits"},{"issue":"7","key":"10.1016\/j.mejo.2009.06.005_bib2","doi-asserted-by":"crossref","first-page":"1079","DOI":"10.1109\/4.597298","article-title":"Low-power logic styles: CMOS versus pass-transistor logic","volume":"32","author":"Zimmermann","year":"1997","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"10.1016\/j.mejo.2009.06.005_bib3","first-page":"661","article-title":"Low voltage, low-power (5:2) compressor cell for fast arithmetic circuits","volume":"2","author":"Gu","year":"2003","journal-title":"Proceedings of the IEEE International Conference on Acoustics, Speech, and Signal Processing"},{"key":"10.1016\/j.mejo.2009.06.005_bib4","unstructured":"J. Gu, C.H. Chang, Ultra Low-voltage, low-power 4-2 compressor for high speed multiplications, Proceedings of the 36th IEEE International Symposium on Circuits and Systems (ISCAS), Bangkok, Thailand, May 2003."},{"key":"10.1016\/j.mejo.2009.06.005_bib5","doi-asserted-by":"crossref","DOI":"10.1016\/j.vlsi.2009.02.001","article-title":"A Novel low-power full-adder cell for low voltage","author":"Navi","year":"2009","journal-title":"Integration, the VLSI Journal"},{"key":"10.1016\/j.mejo.2009.06.005_bib6","first-page":"757","article-title":"A structured approach for designing low-power adders","volume":"1","author":"Shams","year":"1997","journal-title":"Proceedings of the 31st Asilomar Conference on Signals, Systems, and Computers"},{"issue":"1","key":"10.1016\/j.mejo.2009.06.005_bib7","doi-asserted-by":"crossref","first-page":"20","DOI":"10.1109\/92.988727","article-title":"Performance analysis of lowpower 1-bit CMOS full-adder cells","volume":"10","author":"Shams","year":"2002","journal-title":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems"},{"issue":"2","key":"10.1016\/j.mejo.2009.06.005_bib8","doi-asserted-by":"crossref","DOI":"10.4304\/jcp.3.2.48-54","article-title":"Low power and high-performance 1 bit CMOS full-adder cell","volume":"3","author":"Navi","year":"2008","journal-title":"Journal of Computers"},{"issue":"22","key":"10.1016\/j.mejo.2009.06.005_bib9","doi-asserted-by":"crossref","first-page":"3460","DOI":"10.3923\/jas.2007.3460.3468","article-title":"A novel design for quantum-dot cellular automata cells and full-adders","volume":"7","author":"Rahimi Azghadi","year":"2007","journal-title":"Journal of Applied Sciences"},{"issue":"1","key":"10.1016\/j.mejo.2009.06.005_bib10","doi-asserted-by":"crossref","first-page":"126","DOI":"10.1016\/j.mejo.2008.08.020","article-title":"Two new low-power full-adders based on majority-not gates","volume":"40","author":"Navi","year":"2009","journal-title":"Microelectronics Journal, Elsevier"},{"issue":"18","key":"10.1016\/j.mejo.2009.06.005_bib11","doi-asserted-by":"crossref","first-page":"744","DOI":"10.1587\/elex.5.744","article-title":"Ultra high speed full-adders","volume":"5","author":"Navi","year":"2008","journal-title":"IEICE Electronics Express"},{"key":"10.1016\/j.mejo.2009.06.005_bib12","unstructured":"R. Shalem, E. John and L. K. John, A novel low-power energy recovery full-adder cell, In: Proceedings of the Great Lakes Symposium on VLSI, February 1999, pp. 380\u2013383."},{"issue":"7","key":"10.1016\/j.mejo.2009.06.005_bib13","doi-asserted-by":"crossref","DOI":"10.1109\/TCSII.2004.831429","article-title":"A novel multiplexer-based low-power full-adder","volume":"51","author":"Jiang","year":"2004","journal-title":"IEEE Transactions on Circuits and Systems\u2014II: Express Briefs"},{"issue":"6","key":"10.1016\/j.mejo.2009.06.005_bib14","article-title":"A review of 0.18\u03bcm full-adder performances for tree structure arithmetic circuits","volume":"13","author":"Chang","year":"2005","journal-title":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems"},{"key":"10.1016\/j.mejo.2009.06.005_bib15","doi-asserted-by":"crossref","first-page":"1535","DOI":"10.1109\/4.540066","article-title":"Circuit techniques for CMOS low-power high-performance multipliers","volume":"31","author":"Issam","year":"1996","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"10.1016\/j.mejo.2009.06.005_bib16","series-title":"VLSI Design","author":"Vai","year":"2001"},{"key":"10.1016\/j.mejo.2009.06.005_bib17","doi-asserted-by":"crossref","first-page":"840","DOI":"10.1109\/4.133177","article-title":"A new design of the CMOS full-adder","volume":"27","author":"Zhuang","year":"1992","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"10.1016\/j.mejo.2009.06.005_bib18","series-title":"Principles of CMOS VLSI Design: A System Perspective","author":"Weste","year":"1993"},{"issue":"1","key":"10.1016\/j.mejo.2009.06.005_bib19","doi-asserted-by":"crossref","first-page":"19","DOI":"10.1049\/ip-cds:20010170","article-title":"Low-voltage low-power CMOS full-adder","volume":"148","author":"Radhakrishnan","year":"2001","journal-title":"IEE Proceedings. Circuits, Devices and Systems"},{"key":"10.1016\/j.mejo.2009.06.005_bib20","unstructured":"M. Vesterbacka, A 14-transistor CMOS full-adder with full voltage swing nodes, In: Proceedings of the IEEE Workshop on Signal Processing Systems, October 1999, pp. 713\u2013722."},{"issue":"1","key":"10.1016\/j.mejo.2009.06.005_bib21","first-page":"25","article-title":"Design and analysis of low-power 10-transistor full-adders using novel XOR\u2013XNOR gates","volume":"49","author":"Bui","year":"2002","journal-title":"IEEE Transactions on Circuits and Systems. Part II: Analog and Digital Signal Processing"},{"issue":"4","key":"10.1016\/j.mejo.2009.06.005_bib22","doi-asserted-by":"crossref","first-page":"468","DOI":"10.1109\/JSSC.1984.1052168","article-title":"Short circuit dissipation of static CMOS circuitry and its impact on the design of buffer circuits","volume":"SC-19","author":"Veendrick","year":"1984","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"10.1016\/j.mejo.2009.06.005_bib23","unstructured":"S. Heo and K. Asanovi\u0107, Leakage-biased domino circuits for dynamic fine-grain leakage reduction, VLSI Circuits Symposium, Honolulu, HI, June 2002."},{"key":"10.1016\/j.mejo.2009.06.005_bib24","unstructured":"T. McPherson, et al., 760MHz G6 S\/390 microprocessor exploiting multiple Vt and copper interconnects. In: ISSCC, (2000) 96\u201397."},{"key":"10.1016\/j.mejo.2009.06.005_bib25","doi-asserted-by":"crossref","unstructured":"A. Keshavarzi, et al., Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs. In: ISLPED, (2001 August) 207\u2013212.","DOI":"10.1145\/383082.383135"},{"key":"10.1016\/j.mejo.2009.06.005_bib26","doi-asserted-by":"crossref","unstructured":"M.W. Allam, M.H. Anis, M.I. Elmasry, High-speed dynamic logic styles for scaled-down CMOS and MTCMOS technologies. In: ISLPED, (2000) 155\u2013160.","DOI":"10.1145\/344166.344562"},{"issue":"8","key":"10.1016\/j.mejo.2009.06.005_bib27","first-page":"847","article-title":"1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS","volume":"30","author":"Mutoh","year":"1995","journal-title":"IEEE JSSC"},{"key":"10.1016\/j.mejo.2009.06.005_bib28","doi-asserted-by":"crossref","unstructured":"S.V. Kosonocky, et al., Enhanced multi-threshold (MTCMOS) circuits using variable well bias. In: ISLPED, (2001 August) 165\u2013169.","DOI":"10.1145\/383082.383125"},{"issue":"11","key":"10.1016\/j.mejo.2009.06.005_bib29","first-page":"1770","article-title":"A 0.9-V, 150-MHz, 10-mW, 4mm2, 2-D discrete cosine transform core processor with variable threshold-voltage (VT) scheme","volume":"31","author":"Kuroda","year":"1996","journal-title":"IEEE JSSC"},{"issue":"7","key":"10.1016\/j.mejo.2009.06.005_bib30","first-page":"1009","article-title":"Dual-threshold voltage techniques for low-power digital circuits","volume":"35","author":"Kao","year":"2000","journal-title":"IEEE JSSC"},{"key":"10.1016\/j.mejo.2009.06.005_bib31","doi-asserted-by":"crossref","unstructured":"J. B. Kim, D. W. Kim, Low-power carry look-ahead adder with multi-threshold voltage CMOS technology, 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008.","DOI":"10.1109\/ICSICT.2008.4734996"},{"issue":"6","key":"10.1016\/j.mejo.2009.06.005_bib32","first-page":"861","article-title":"A 1-V high-speed MTCMOS circuit scheme for power-down application circuits","volume":"32","author":"Shigematsu","year":"1997","journal-title":"IEEE JSSC"},{"issue":"9\u201310","key":"10.1016\/j.mejo.2009.06.005_bib33","doi-asserted-by":"crossref","first-page":"2142","DOI":"10.1016\/j.mee.2007.04.056","article-title":"In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction","volume":"84","author":"Webb","year":"2007","journal-title":"Microelectronic Engineering"},{"issue":"3","key":"10.1016\/j.mejo.2009.06.005_bib34","doi-asserted-by":"crossref","first-page":"1323","DOI":"10.1016\/j.apsusc.2006.02.004","article-title":"Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers","volume":"253","author":"Das","year":"2006","journal-title":"Applied Surface Science"},{"issue":"1\u20132","key":"10.1016\/j.mejo.2009.06.005_bib35","doi-asserted-by":"crossref","first-page":"141","DOI":"10.1016\/j.tsf.2004.11.239","article-title":"Growth mechanism of TiN film on dielectric films and the effects on the work function","volume":"486","author":"Choi","year":"2005","journal-title":"Thin Solid Films"}],"container-title":["Microelectronics Journal"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269209001153?httpAccept=text\/xml","content-type":"text\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/api.elsevier.com\/content\/article\/PII:S0026269209001153?httpAccept=text\/plain","content-type":"text\/plain","content-version":"vor","intended-application":"text-mining"}],"deposited":{"date-parts":[[2024,7,5]],"date-time":"2024-07-05T23:20:03Z","timestamp":1720221603000},"score":1,"resource":{"primary":{"URL":"https:\/\/linkinghub.elsevier.com\/retrieve\/pii\/S0026269209001153"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009,10]]},"references-count":35,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2009,10]]}},"alternative-id":["S0026269209001153"],"URL":"https:\/\/doi.org\/10.1016\/j.mejo.2009.06.005","relation":{},"ISSN":["1879-2391"],"issn-type":[{"value":"1879-2391","type":"print"}],"subject":[],"published":{"date-parts":[[2009,10]]},"assertion":[{"value":"Elsevier","name":"publisher","label":"This article is maintained by"},{"value":"A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter","name":"articletitle","label":"Article Title"},{"value":"Microelectronics Journal","name":"journaltitle","label":"Journal Title"},{"value":"https:\/\/doi.org\/10.1016\/j.mejo.2009.06.005","name":"articlelink","label":"CrossRef DOI link to publisher maintained version"},{"value":"article","name":"content_type","label":"Content Type"},{"value":"Copyright \u00a9 2009 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.","name":"copyright","label":"Copyright"}]}}
