Rick Carter

System And Method For Tracking Attendance

Application

#2016036 Dec 15, 2016

Filed

Jun 10, 2015

Inventor

Rick Carter (Chicago, IL) · Marc Cain (Villa Park, IL) · Scott Goldberg (Villa Park, IL)

Appl. No.

14/736227

Assignee

Rick Carter (Chicago, IL) · Marc Cain (Villa Park, IL) · Scott Goldberg (Villa Park, IL)

International Classification

G06Q 50/20, H04W 4/02, H04W 4/12, H04W 68/00

Abstract

A system and method include a backstage server. The backstage server includes a backstage application executed by a processor. The backstage application receives a notification from a mobile device...

Differential Sg/Eg Spacer Integration With Equivalent Nfet/Pfet Spacer Widths & Dual Raised Source Drain Expitaxial Silicon And Triple-Nitride Spacer Integration Enabling High-Voltage Eg Device On Fdsoi

Application

#2020008 Mar 12, 2020

Filed

Nov 11, 2019

Inventor

Ryan SPORER (Mechanicsville, NY) · Rick J. CARTER (Saratoga Springs, NY) · Peter BAARS (Dresden, DE) · Hans-Jürgen THEES (Dresden, DE) · Jan HÖNTSCHEL (Dresden, DE)

Appl. No.

16/680196

Assignee

Ryan SPORER (Mechanicsville, NY) · Rick J. CARTER (Saratoga Springs, NY) · Peter BAARS (Dresden, DE) · Hans-Jürgen THEES (Dresden, DE) · Jan HÖNTSCHEL (Dresden, DE)

International Classification

H01L 29/66, H01L 21/8238, H01L 21/84, H01L 27/092, H01L 27/12, H01L 29/78

Abstract

A method of forming matched PFET/NFET spacers with differential widths for SG and EG structures and a method of forming differential width nitride spacers for SG NFET and SG PFET structures and...

Maskless Stress Memorization Technique For Cmos Devices

Application

#2009014 Jun 4, 2009

Filed

Nov 30, 2007

Inventor

Young-Hee Kim (Yorktown Heights, NY) · Jeffrey W. Sleight (Ridgefield, CT) · Huiming Bu (Millwood, NY) · Rick Carter (Hopewell Junction, NY) · Mike Hargrove (Clinton Corners, NY)

Appl. No.

11/948849

Assignee

International Business Machines Corporation (Armonk, NY)

International Classification

H01L 21/8238

U.S. Classification

438199, 257E21632

Abstract

In one embodiment, the present invention provides a method of manufacturing a semiconducting device that includes providing a silicon containing substrate having PFET device and NFET device, wherein...

Methods Of Integrating Reverse Esige On Nfet And Sige Channel On Pfet, And Related Structure

Application

#8232186 Jul 31, 2012

Filed

May 29, 2008

Inventor

Eric C. T. Harley (LaGrangeville, NY) · Judson R. Holt (Wappingers Falls, NY) · Dominic J. Schepis (Wappingers Falls, NY) · Michael D. Steigerwalt (Newburgh, NY) · Linda Black (Fishkill, NY) · Rick Carter (Hopewell Junction, NY)

Appl. No.

12/128955

Assignee

International Business Machines Corporation (Armonk, NY) · Globalfoundries (Grand Cayman)

International Classification

H01L 21/20

U.S. Classification

438507, 438199, 257E21633, 257E27062

Abstract

Methods of integrating reverse embedded silicon germanium (SiGe) on an NFET and SiGe channel on a PFET, and a related structure are disclosed. One method may include providing a substrate including...

Fdsoi Semiconductor Device With Contact Enhancement Layer And Method Of Manufacturing

Application

#2019014 May 16, 2019

Filed

Nov 13, 2017

Inventor

Rick Carter (Saratoga Springs, NY) · Vikrant Chauhan (Cohoes, NY) · George Jonathan Kluth (Saratoga Springs, NY) · Anurag Mittal (San Jose, CA) · David Pritchard (Glenville, NY) · Mahbub Rashed (Cupertino, CA)

Appl. No.

15/810557

Assignee

Rick Carter (Saratoga Springs, NY) · Vikrant Chauhan (Cohoes, NY) · George Jonathan Kluth (Saratoga Springs, NY) · Anurag Mittal (San Jose, CA) · David Pritchard (Glenville, NY) · Mahbub Rashed (Cupertino, CA)

International Classification

H01L 21/8238, H01L 27/092, H01L 29/417, H01L 27/12, H01L 29/49

Abstract

A method of forming contacts includes forming a plurality of transistor devices separated by shallow trench insulator regions, the transistor devices each comprising a semiconductor substrate, a...

Gate Stack Structure With Oxygen Gettering Layer

Application

#2009015 Jun 18, 2009

Filed

Dec 18, 2007

Inventor

Huiming Bu (Millwood, NY) · Rick Carter (Hopewell Junction, NY) · Michael P. Chudzik (Danbury, CT) · Troy L. Graves (Wappingers Falls, NY) · Michael A. Gribelyuk (Stamford, CT) · Rashmi Jha (Wappingers Falls, NY) · Vijay Narayanan (New York, NY) · Vamsi K. Paruchuri (New York, NY) · Hongwen Yan (Somers, NY) · Bruce B. Doris (Brewster, NY) · Keith Kwong Hon Wong (Wappingers Falls, NY)

Appl. No.

11/958595

Assignee

INTERNATIONAL BUSINESS MACHINES CORPORATION (ARMONK, NY) · AMD (SUNNYVALE, CA)

International Classification

H01L 29/78

U.S. Classification

257411, 257E29255

Abstract

A transistor has a channel region in a substrate and source and drain regions in the substrate on opposite sides of the channel region. A gate stack is formed on the substrate above the channel...