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- SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon",is a cross sectional structure of MOSFET (metal-oxide-semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material.A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon").Companies offering SONOS-based products include Cypress Semiconductor, Macronix, Toshiba, United Microelectronics Corporation and Floadia. (en)
- SONOS är en typ av icke-flyktigt minne. Förkortningen står för "Silicon-Oxide-Nitride-Oxide-Silicon", det vill säga kisel-oxid-nitrid-oxid-kisel. SONOS-minnen är nära släkt med flashminnen, men skiljer sig dock genom att utnyttja kiselnitrid (Si3N4) för lagring av laddning, istället för flashminnenas polykristallina kisel. Denna datorminne-relaterade artikel saknar väsentlig information. Du kan hjälpa till genom att lägga till den. (sv)
- SONOS，是硅-氧化物-氮化物-氧化物-硅（英語：Silicon-Oxide-Nitride-Oxide-Silicon）的英语首字母缩写，是一种和闪存联系较为紧密的。它与主流的闪存主要区别在于，它使用了氮化硅（Si3N4），而不是多晶硅，来充当存储材料。它的一个分支是SHINOS（硅-高电介质-氮化物-氧化物-硅）。SONOS允许比多晶硅闪存更低的编程电压和更高的编程-擦除循环次数，是一个较为活跃的研究、开发热点。提供基于SONOS产品的公司包括GlobalFoundries、Cypress Semiconductor、Macronix、东芝、联华电子、。 (zh)
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- SONOS är en typ av icke-flyktigt minne. Förkortningen står för "Silicon-Oxide-Nitride-Oxide-Silicon", det vill säga kisel-oxid-nitrid-oxid-kisel. SONOS-minnen är nära släkt med flashminnen, men skiljer sig dock genom att utnyttja kiselnitrid (Si3N4) för lagring av laddning, istället för flashminnenas polykristallina kisel. Denna datorminne-relaterade artikel saknar väsentlig information. Du kan hjälpa till genom att lägga till den. (sv)
- SONOS，是硅-氧化物-氮化物-氧化物-硅（英語：Silicon-Oxide-Nitride-Oxide-Silicon）的英语首字母缩写，是一种和闪存联系较为紧密的。它与主流的闪存主要区别在于，它使用了氮化硅（Si3N4），而不是多晶硅，来充当存储材料。它的一个分支是SHINOS（硅-高电介质-氮化物-氧化物-硅）。SONOS允许比多晶硅闪存更低的编程电压和更高的编程-擦除循环次数，是一个较为活跃的研究、开发热点。提供基于SONOS产品的公司包括GlobalFoundries、Cypress Semiconductor、Macronix、东芝、联华电子、。 (zh)
- SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon",is a cross sectional structure of MOSFET (metal-oxide-semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material.A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted (en)
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- SONOS (ca)
- SONOS (en)
- SONOS (sv)
- SONOS (zh)
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