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- Ion layer gas reaction (ILGAR®) is a non-vacuum, thin-film deposition technique developed and patented by the group of Professor Dr. Christian-Herbert Fischer at the Helmholtz-Zentrum Berlin for materials and energy in Berlin, Germany. It is a sequential and cyclic process that enables the deposition of semiconductor thin films, mainly for (although not restricted to) photovoltaic applications, specially chalcopyrite absorber layers and buffer layers. The ILGAR technique was awarded as German High Tech Champion 2011 by the Fraunhofer Society. ILGAR is a chemical process that allows for the deposition of layers in a homogeneous, adherent and mechanically stable form without using vacuum or high temperatures. It is a sequential and cyclic process which can be automated and scaled up. It consists basically of the following steps:
* Application of a precursor solution on a substrate by dipping (Dip-ILGAR) or spraying (Spray ILGAR).
* Reaction of the dry solid precursor layer with a hydrogen chalcogenide gas. These steps are repeated until the desired layer thickness is obtained. In the case of spray-ILGAR, the spray deposition of the ionic layer is performed using similar equipment to atmospheric pressure aerosol assisted chemical vapour deposition or spray pyrolysis. Spray pyrolysis can be regarded as a simplified version of the spray ILGAR process, where there is no reaction of the precursor layer with a reactant gas. The cyclical nature of this process makes it similar to atomic layer deposition (ALD), which is also used for buffer layer deposition. (en)
- Ионно-молекулярное наслаивание — один из методов послойного синтеза на поверхности подложки нанослоев с использованием в качестве реагентов ионов (катионов или анионов) из растворов и молекул летучих веществ из газовой фазы. Метод предложен проф. В. П. Толстым и экспериментально обоснован в его работах с сотрудниками в лаборатории Санкт-Петербургского государственного университета. В англо-язычной литературе метод получил название Ionic Layer Gas Reaction (ILGAR) и находит применение для создания солнечных элементов, электродов химических источников тока и др. (ru)
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- Ионно-молекулярное наслаивание — один из методов послойного синтеза на поверхности подложки нанослоев с использованием в качестве реагентов ионов (катионов или анионов) из растворов и молекул летучих веществ из газовой фазы. Метод предложен проф. В. П. Толстым и экспериментально обоснован в его работах с сотрудниками в лаборатории Санкт-Петербургского государственного университета. В англо-язычной литературе метод получил название Ionic Layer Gas Reaction (ILGAR) и находит применение для создания солнечных элементов, электродов химических источников тока и др. (ru)
- Ion layer gas reaction (ILGAR®) is a non-vacuum, thin-film deposition technique developed and patented by the group of Professor Dr. Christian-Herbert Fischer at the Helmholtz-Zentrum Berlin for materials and energy in Berlin, Germany. It is a sequential and cyclic process that enables the deposition of semiconductor thin films, mainly for (although not restricted to) photovoltaic applications, specially chalcopyrite absorber layers and buffer layers. The ILGAR technique was awarded as German High Tech Champion 2011 by the Fraunhofer Society. (en)
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- Ion layer gas reaction (en)
- Ионно-молекулярное наслаивание (ru)
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